PIC18F65K22-E/PT Microchip Technology, PIC18F65K22-E/PT Datasheet - Page 499

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PIC18F65K22-E/PT

Manufacturer Part Number
PIC18F65K22-E/PT
Description
32kB Flash, 2kB RAM, 1kB EE, NanoWatt XLP, GP 64 TQFP 10x10x1mm TRAY
Manufacturer
Microchip Technology
Series
PIC® XLP™ 18Fr
Datasheet

Specifications of PIC18F65K22-E/PT

Core Processor
PIC
Core Size
8-Bit
Speed
64MHz
Connectivity
I²C, LIN, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, LVD, POR, PWM, WDT
Number Of I /o
53
Program Memory Size
32KB (16K x 16)
Program Memory Type
FLASH
Eeprom Size
1K x 8
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 5.5 V
Data Converters
A/D 16x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
64-TQFP
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PIC18F65K22-E/PT
Manufacturer:
Microchip Technology
Quantity:
10 000
TABLE 31-1:
 2011 Microchip Technology Inc.
DC CHARACTERISTICS
D110
D113
D120
D121
D122
D123
D124
D130
D131
D132B V
D133A T
D134
D135
D140
Note 1:
Param
No.
2:
3:
4:
† Data in “Typ” column is at 3.3V, 25°C unless otherwise stated. These parameters are for design guidance
I
E
V
T
T
T
E
V
T
I
T
V
DDP
DDP
Sym
RETD
REF
IW
RETD
WE
PP
D
DRW
DEW
P
PR
PEW
only and are not tested.
These specifications are for programming the on-chip program memory through the use of table write
instructions.
Refer to
endurance.
Required only if Single-Supply Programming is disabled.
The MPLAB
must be placed between the MPLAB ICD 2 and the target system when programming or debugging with
the MPLAB ICD 2.
Internal Program Memory
Programming Specifications
Voltage on MCLR/V
Supply Current during
Programming
Data EEPROM Memory
Byte Endurance
V
Erase/Write Cycle Time
Characteristic Retention
Number of Total Erase/Write
Cycles before Refresh
Program Flash Memory
Cell Endurance
V
Voltage for Self-Timed Erase or
Write Operations
V
Self-Timed Write Cycle Time
Characteristic Retention
Supply Current during
Programming
Writes per Erase Cycle
MEMORY PROGRAMMING REQUIREMENTS
DD
DD
DD
Section 9.8 “Using the Data EEPROM”
for Read/Write
for Read
®
ICD 2 does not support variable V
Characteristic
PP
/RE5 pin
(2)
(1)
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C  T
V
DD
100K
10K
Min
1.8
1.8
1M
1.8
1.8
1.8
40
40
+ 1.5
PP
PIC18F87K22 FAMILY
for a more detailed discussion on data EEPROM
output. Circuitry to limit the MPLAB ICD 2 V
Typ†
10M
4
2
Max
-40°C  T
5.5
3.6
5.5
3.6
5.5
10
10
10
1
Units
Year Provided no other
Year Provided no other
E/W -40  C to +125  C
E/W -40°C to +125°C
E/W -40  C to +125  C
mA
mA
ms
ms
A
A
V
V
V
V
V
V
 +125°C for extended
 +85°C for industrial
(Note 3, Note 4)
(Note 2)
Using EECON to read/
write, ENVREG tied to V
Using EECON to read/
write, ENVREG tied to V
specifications are violated
ENVREG tied to V
ENVREG tied to V
ENVREG tied to V
specifications are violated
For each physical address
Conditions
DS39960D-page 499
PP
DD
SS
DD
voltage
DD
SS

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