BFU725F/N1,115 NXP Semiconductors, BFU725F/N1,115 Datasheet - Page 9

• Manufacturer Part Number: BFU725F/N1,115
• Description: TRANSISTOR NPN 40MA SOT343
• Manufacturer: NXP Semiconductors

Specifications of BFU725F/N1,115

• Package / Case: SOT-343N
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 2.8V
• Frequency - Transition: 55GHz
• Noise Figure (db Typ @ F): 0.42dB ~ 1.1dB @ 1.5GHz ~ 12GHz
• Gain: 10dB ~ 24dB
• Power - Max: 136mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 10mA, 2V
• Current - Collector (ic) (max): 40mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 40
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 55 GHz
• Collector- Emitter Voltage Vceo Max: 2.8 V
• Emitter- Base Voltage Vebo: 0.55 V
• Continuous Collector Current: 40 mA
• Power Dissipation: 136 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-5111-2; BFU725F/N1,115

NXP Semiconductors
9. Abbreviations
10. Revision history
Table 9.
BFU725F_N1_1
Product data sheet
Document ID
BFU725F_N1_1
Revision history
Table 8.
Acronym
CDMA
DBS
DC
DRO
LNA
LNB
Ka
NPN
RF
WLAN
Release date
20090713
Abbreviations
Description
Code Division Multiple Access
Direct Broadcast Satellite
Direct Current
Dielectric Resonator Oscillator
Low Noise Amplifier
Low Noise Block
Kurtz above
Negative-Positive-Negative
Radio Frequency
Wireless Local Area Network
Data sheet status
Product data sheet
Rev. 01 — 13 July 2009
NPN wideband silicon germanium RF transistor
Change notice
-
BFU725F/N1
Supersedes
-
© NXP B.V. 2009. All rights reserved.
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