BFU725F/N1,115 NXP Semiconductors, BFU725F/N1,115 Datasheet - Page 7

• Manufacturer Part Number: BFU725F/N1,115
• Description: TRANSISTOR NPN 40MA SOT343
• Manufacturer: NXP Semiconductors

Specifications of BFU725F/N1,115

• Package / Case: SOT-343N
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 2.8V
• Frequency - Transition: 55GHz
• Noise Figure (db Typ @ F): 0.42dB ~ 1.1dB @ 1.5GHz ~ 12GHz
• Gain: 10dB ~ 24dB
• Power - Max: 136mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 10mA, 2V
• Current - Collector (ic) (max): 40mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 40
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 55 GHz
• Collector- Emitter Voltage Vceo Max: 2.8 V
• Emitter- Base Voltage Vebo: 0.55 V
• Continuous Collector Current: 40 mA
• Power Dissipation: 136 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-5111-2; BFU725F/N1,115

NXP Semiconductors
BFU725F_N1_1
Product data sheet
Fig 7.
Fig 9.
NF
(dB)
(dB)
G
(1) f = 12 GHz
(2) f = 5.8 GHz
(3) f = 2.4 GHz
(4) f = 1.8 GHz
(5) f = 1.5 GHz
min
2.0
1.6
1.2
0.8
0.4
50
40
30
20
10
0
0
10
0
V
Gain as a function of frequency; typical values
V
Minimum noise figure as a function of
collector current; typical values
CE
CE
2
= 2 V; I
= 2 V; T
IS21I
MSG
10
C
amb
1
= 5 mA; T
2
10
= 25 C.
1
amb
= 25 C.
20
10
G
I
C
p(max)
f (GHz)
001aah430
001aah432
(mA)
MSG
(1)
(2)
(3)
(4)
(5)
10
30
Rev. 01 — 13 July 2009
2
Fig 8.
Fig 10. Minimum noise figure as a function of
NF
(dB)
(dB)
NPN wideband silicon germanium RF transistor
G
(1) I
(2) I
min
2.0
1.6
1.2
0.8
0.4
50
40
30
20
10
0
0
10
V
Gain as a function of frequency; typical values
0
V
frequency; typical values
C
C
2
CE
CE
= 25 mA
= 5 mA
= 2 V; I
= 2 V; T
IS21I
MSG
10
4
C
amb
2
1
= 25 mA; T
= 25 C.
1
8
amb
BFU725F/N1
= 25 C.
10
12
G
© NXP B.V. 2009. All rights reserved.
p(max)
f (GHz)
f (GHz)
001aah431
001aah433
MSG
(1)
(2)
10
16
2
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