BFU725F/N1,115 NXP Semiconductors, BFU725F/N1,115 Datasheet - Page 8

• Manufacturer Part Number: BFU725F/N1,115
• Description: TRANSISTOR NPN 40MA SOT343
• Manufacturer: NXP Semiconductors

Specifications of BFU725F/N1,115

• Package / Case: SOT-343N
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 2.8V
• Frequency - Transition: 55GHz
• Noise Figure (db Typ @ F): 0.42dB ~ 1.1dB @ 1.5GHz ~ 12GHz
• Gain: 10dB ~ 24dB
• Power - Max: 136mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 10mA, 2V
• Current - Collector (ic) (max): 40mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 40
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 55 GHz
• Collector- Emitter Voltage Vceo Max: 2.8 V
• Emitter- Base Voltage Vebo: 0.55 V
• Continuous Collector Current: 40 mA
• Power Dissipation: 136 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-5111-2; BFU725F/N1,115

NXP Semiconductors
8. Package outline
Fig 11. Package outline SOT343F
BFU725F_N1_1
Product data sheet
Plastic surface-mounted flat pack package; reverse pinning; 4 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT343F
max
0.75
0.65
A
0.4
0.3
b
w
p
M
A
0.7
0.5
b
1
3
2
IEC
b
0.25
0.10
p
c
y
2.2
1.8
D
e
D
1
e
1.35
1.15
JEDEC
E
b
1
REFERENCES
1.3
e
0
4
1
Rev. 01 — 13 July 2009
1.15
e
1
A
w
JEITA
H
2.2
2.0
M
E
scale
A
1
0.48
0.38
L
p
NPN wideband silicon germanium RF transistor
0.2
w
2 mm
0.1
y
A
detail X
H
PROJECTION
E
EUROPEAN
E
L
p
BFU725F/N1
c
© NXP B.V. 2009. All rights reserved.
X
ISSUE DATE
05-07-12
06-03-16
SOT343F
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