BFU725F/N1,115 NXP Semiconductors, BFU725F/N1,115 Datasheet - Page 3

TRANSISTOR NPN 40MA SOT343

BFU725F/N1,115

Manufacturer Part Number
BFU725F/N1,115
Description
TRANSISTOR NPN 40MA SOT343
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BFU725F/N1,115

Package / Case
SOT-343N
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
2.8V
Frequency - Transition
55GHz
Noise Figure (db Typ @ F)
0.42dB ~ 1.1dB @ 1.5GHz ~ 12GHz
Gain
10dB ~ 24dB
Power - Max
136mW
Dc Current Gain (hfe) (min) @ Ic, Vce
160 @ 10mA, 2V
Current - Collector (ic) (max)
40mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
40
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
55 GHz
Collector- Emitter Voltage Vceo Max
2.8 V
Emitter- Base Voltage Vebo
0.55 V
Continuous Collector Current
40 mA
Power Dissipation
136 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-5111-2
BFU725F/N1,115

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BFU725F/N1,115
Manufacturer:
ST
Quantity:
3 150
Part Number:
BFU725F/N1,115
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
5. Limiting values
6. Thermal characteristics
BFU725F_N1_1
Product data sheet
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Table 6.
Symbol
V
V
V
I
P
T
T
Symbol
R
C
Fig 1.
stg
j
CBO
CEO
EBO
tot
th(j-sp)
T
sp
is the temperature at the solder point of the emitter lead.
Power derating curve
Limiting values
Thermal characteristics
Parameter
thermal resistance from junction to solder point
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
storage temperature
junction temperature
(mW)
P
tot
200
150
100
Rev. 01 — 13 July 2009
50
0
0
40
Conditions
open emitter
open base
open collector
T
NPN wideband silicon germanium RF transistor
sp
90 C
80
120
T
001aah424
[1]
sp
( C)
Min
-
-
-
-
-
-
65
160
Conditions
BFU725F/N1
Max
10
2.8
0.55
40
136
+150
150
© NXP B.V. 2009. All rights reserved.
Typ
440
Unit
V
V
V
mA
mW
C
C
Unit
K/W
3 of 11

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