BFU725F/N1,115 NXP Semiconductors, BFU725F/N1,115 Datasheet - Page 2

• Manufacturer Part Number: BFU725F/N1,115
• Description: TRANSISTOR NPN 40MA SOT343
• Manufacturer: NXP Semiconductors

Specifications of BFU725F/N1,115

• Package / Case: SOT-343N
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 2.8V
• Frequency - Transition: 55GHz
• Noise Figure (db Typ @ F): 0.42dB ~ 1.1dB @ 1.5GHz ~ 12GHz
• Gain: 10dB ~ 24dB
• Power - Max: 136mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 10mA, 2V
• Current - Collector (ic) (max): 40mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 40
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 55 GHz
• Collector- Emitter Voltage Vceo Max: 2.8 V
• Emitter- Base Voltage Vebo: 0.55 V
• Continuous Collector Current: 40 mA
• Power Dissipation: 136 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-5111-2; BFU725F/N1,115

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Marking
BFU725F_N1_1
Product data sheet
Table 1.
[1]
[2]
Table 2.
Table 3.
Table 4.
Symbol Parameter
C
f
G
NF
Pin
1
2
3
4
Type number
BFU725F/N1
Type number
BFU725F/N1
T
CBS
p(max)
T
G
sp
p(max)
is the temperature at the solder point of the emitter lead.
collector-base
capacitance
transition frequency
maximum power gain
noise figure
is the maximum power gain, if K > 1. If K < 1 then G
Quick reference data
Discrete pinning
Ordering information
Marking
Description
emitter
base
emitter
collector
Package
Name
-
Rev. 01 — 13 July 2009
Description
plastic surface-mounted flat pack package; reverse
pinning; 4 leads
Marking
B7*
…continued
Conditions
V
I
f = 2 GHz; T
I
f = 5.8 GHz; T
I
f = 5.8 GHz;
T
C
C
C
amb
CB
= 25 mA; V
= 25 mA; V
= 5 mA; V
= 2 V; f = 1 MHz
NPN wideband silicon germanium RF transistor
= 25 C
amb
CE
CE
CE
amb
S
= 2 V;
=
= 25 C
= 2 V;
= 2 V;
Simplified outline
= 25 C
opt
p(max)
;
3
2
= Maximum Stable Gain (MSG).
[2]
Description
* = p : made in Hong Kong
* = t : made in Malaysia
* = W : made in China
1
4
BFU725F/N1
Min
-
-
-
-
Typ
70
55
18
0.7
Graphic symbol
© NXP B.V. 2009. All rights reserved.
2
Max
-
-
-
-
mbb159
Version
SOT343F
1, 3
4
fF
Unit
GHz
dB
dB
2 of 11