BFU725F/N1,115 NXP Semiconductors, BFU725F/N1,115 Datasheet - Page 6

• Manufacturer Part Number: BFU725F/N1,115
• Description: TRANSISTOR NPN 40MA SOT343
• Manufacturer: NXP Semiconductors

Specifications of BFU725F/N1,115

• Package / Case: SOT-343N
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 2.8V
• Frequency - Transition: 55GHz
• Noise Figure (db Typ @ F): 0.42dB ~ 1.1dB @ 1.5GHz ~ 12GHz
• Gain: 10dB ~ 24dB
• Power - Max: 136mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 10mA, 2V
• Current - Collector (ic) (max): 40mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 40
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 55 GHz
• Collector- Emitter Voltage Vceo Max: 2.8 V
• Emitter- Base Voltage Vebo: 0.55 V
• Continuous Collector Current: 40 mA
• Power Dissipation: 136 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-5111-2; BFU725F/N1,115

NXP Semiconductors
BFU725F_N1_1
Product data sheet
Fig 4.
Fig 6.
C
(fF)
CBS
(1) f = 1.5 GHz
(2) f = 1.8 GHz
(3) f = 2.4 GHz
(4) f = 5.8 GHz
(5) f = 12 GHz
160
120
80
40
0
0
f = 1 MHz, T
Collector-base capacitance as a function of
collector-base voltage; typical values
V
Gain as a function of collector current; typical value
CE
= 2 V; T
amb
amb
4
= 25 C.
= 25 C.
(dB)
8
G
10
10
1
2
10
V
CB
1
001aah427
(V)
12
Rev. 01 — 13 July 2009
1
(1)
(2)
(3)
MSG
Fig 5.
MSG
G
max
(GHz)
NPN wideband silicon germanium RF transistor
10
f
T
G
60
40
20
max
0
I
0
V
Transition frequency as a function of collector
current; typical values
C
CE
(4)
(5)
001aah429
(mA)
= 2 V; f = 2 GHz; T
10
10
2
20
amb
BFU725F/N1
= 25 C.
30
© NXP B.V. 2009. All rights reserved.
I
001aak273
C
(mA)
40
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