BFU725F/N1,115 NXP Semiconductors, BFU725F/N1,115 Datasheet
BFU725F/N1,115
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BFU725F/N1,115
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BFU725F/N1,115 Summary of contents
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BFU725F/N1 NPN wideband silicon germanium RF transistor Rev. 01 — 13 July 2009 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device ...
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... NXP Semiconductors Table 1. Symbol Parameter C CBS p(max [2] G p(max) 2. Pinning information Table 2. Pin Ordering information Table 3. Type number BFU725F/N1 4. Marking Table 4. Type number BFU725F/N1 BFU725F_N1_1 Product data sheet Quick reference data …continued Conditions collector-base V CB capacitance transition frequency mA GHz; T maximum power gain ...
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... NXP Semiconductors 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol V CBO V CEO V EBO tot T stg the temperature at the solder point of the emitter lead Thermal characteristics Table 6. Symbol R th(j-sp) Fig 1. BFU725F_N1_1 Product data sheet NPN wideband silicon germanium RF transistor ...
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... NXP Semiconductors 7. Characteristics Table 7. Characteristics unless otherwise specified. j Symbol Parameter V collector-base breakdown (BR)CBO voltage V collector-emitter breakdown (BR)CEO voltage I collector current C I collector-base cut-off current CBO h DC current gain FE C collector-emitter capacitance CES C emitter-base capacitance EBS C collector-base capacitance CBS f transition frequency ...
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... NXP Semiconductors Table 7. Characteristics …continued unless otherwise specified. j Symbol Parameter P output power gain L(1dB) compression IP3 third-order intercept point [ the maximum power gain p(max (mA 0.5 1.0 1.5 2 amb ( 110 100 (10 (11 Fig 2. Collector current as a function of collector-emitter voltage; typical values ...
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... NXP Semiconductors 160 C CBS (fF) 120 MHz amb Fig 4. Collector-base capacitance as a function of collector-base voltage; typical values amb ( 1.5 GHz ( 1.8 GHz ( 2.4 GHz ( 5.8 GHz ( GHz Fig 6. Gain as a function of collector current; typical value BFU725F_N1_1 Product data sheet NPN wideband silicon germanium RF transistor ...
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... NXP Semiconductors 50 G (dB) 40 MSG 30 2 IS21I mA amb Fig 7. Gain as a function of frequency; typical values 2.0 NF min (dB) 1.6 1.2 0.8 0 amb ( GHz ( 5.8 GHz ( 2.4 GHz ( 1.8 GHz ( 1.5 GHz Fig 9. Minimum noise figure as a function of collector current; typical values BFU725F_N1_1 ...
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... NXP Semiconductors 8. Package outline Plastic surface-mounted flat pack package; reverse pinning; 4 leads DIMENSIONS (mm are the original dimensions) A UNIT max 0.75 0.4 0.7 0.25 mm 0.65 0.3 0.5 0.10 OUTLINE VERSION IEC SOT343F Fig 11. Package outline SOT343F BFU725F_N1_1 Product data sheet scale 2.2 1 ...
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... NXP Semiconductors 9. Abbreviations Table 8. Acronym CDMA DBS DC DRO LNA LNB Ka NPN RF WLAN 10. Revision history Table 9. Revision history Document ID Release date BFU725F_N1_1 20090713 BFU725F_N1_1 Product data sheet NPN wideband silicon germanium RF transistor Abbreviations Description Code Division Multiple Access Direct Broadcast Satellite Direct Current Dielectric Resonator Oscillator Low Noise Amplifi ...
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... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
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... NXP Semiconductors 13. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 9 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 11 Legal information ...