SI4866BDY-T1-E3 Vishay, SI4866BDY-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI4866BDY-T1-E3
• Description: N-CHANNEL 12-V (D-S) MOSFET
• Manufacturer: Vishay

Specifications of SI4866BDY-T1-E3

• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0053 Ohms
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 16.1 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
*The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 70341
S-71342-Rev. A, 09-Jul-07
6
5
4
3
2
1
0
0
25
D
Power, Junction-to-Foot
is based on T
T
C
50
- Case Temperature (°C)
75
J(max)
100
= 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
25
20
15
10
5
0
0
125
25
New Product
150
T
C
Current Derating*
50
- Case Temperature (°C)
75
100
2.0
1.6
1.2
0.8
0.4
0.0
0
125
25
Power, Junction-to-Ambient
150
T
C
50
- Case Temperature (°C)
75
Vishay Siliconix
Si4866BDY
100
www.vishay.com
125
150
5