SI4866BDY-T1-E3 Vishay, SI4866BDY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4866BDY-T1-E3
• Description: N-CHANNEL 12-V (D-S) MOSFET
• Manufacturer: Vishay

Specifications of SI4866BDY-T1-E3

• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0053 Ohms
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 16.1 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

Si4866BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
- 0.1
- 0.3
- 0.5
0.01
100
0.3
0.1
0.1
10
1
0.0
- 50
Source-Drain Diode Forward Voltage
- 25
0.2
V
150 °C
SD
0
- Source-to-Drain Voltage (V)
0.4
Threshold Voltage
T
J
25
- Temperature (°C)
0.6
50
25 °C
I
75
D
0.8
= 250 µA
0.01
100
0.1
10
0.01
100
1
*Limited by r
I
D
Safe Operating Area, Junction-to-Ambient
1.0
*V
= 5 mA
125
GS
New Product
V
Single Pulse
0.1
T
DS
minimum V
1.2
DS(on)
150
A
= 25 °C
- Drain-to-Source Voltage (V)
GS
at which r
1
DS(on)
0.020
0.016
0.012
0.008
0.004
0.000
200
160
120
80
40
10
0
0.001
is specified
0
10 ms
100 ms
1 s
1 ms
10 s
On-Resistance vs. Gate-to-Source Voltage
DC
I
Single Pulse Power, Junction-to-Ambient
D
= 12 A
1
100
0.01
V
GS
- Gate-to-Source Voltage (V)
2
Time (sec)
0.1
S-71342-Rev. A, 09-Jul-07
Document Number: 70341
3
125 °C
25 °C
1
4
10
5