SI4866BDY-T1-E3 Vishay, SI4866BDY-T1-E3 Datasheet

SI4866BDY-T1-E3

Manufacturer Part Number

SI4866BDY-T1-E3

Description

N-CHANNEL 12-V (D-S) MOSFET

Manufacturer

Vishay

Datasheets

1.SI4866BDY-T1-E3.pdf (7 pages)

2.SI4866BDY-T1-E3.pdf (10 pages)

Specifications of SI4866BDY-T1-E3

Configuration

Single Quad Drain Triple Source

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.0053 Ohms

Drain-source Breakdown Voltage

12 V

Gate-source Breakdown Voltage

+/- 8 V

Continuous Drain Current

16.1 A

Power Dissipation

2.5 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Package / Case

SOIC-8 Narrow

Minimum Operating Temperature

- 55 C

Lead Free Status / Rohs Status

Details

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SI4866BDY-T1-E3

Manufacturer:

VISHAY

Quantity:

20 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

SI4866BDY-T1-E3

Manufacturer:

VISHAY/威世

Quantity:

20 000

Company:

H&T Electronics

Part Number:

SI4866BDY-T1-E3

Quantity:

70 000

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Notes:

a. Based on T

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under Steady State conditions is 90 °C/W.

Document Number: 70341

S09-0540-Rev. B, 06-Apr-09

Ordering Information: Si4866BDY-T1-E3 (Lead (Pb)-free)

ABSOLUTE MAXIMUM RATINGS T

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Pulsed Drain Current

Continuous Source-Drain Diode Current

Single Pulse Avalanche Current

Avalanche Energy

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain)

PRODUCT SUMMARY

(V)

= 25 °C.

0.0053 at V

0.0074 at V

0.006 at V

Si4866BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)

DS(on)

Top View

SO-8

(Ω)

= 2.5 V

= 4.5 V

= 1.8 V

= 150 °C)

b,d

N-Channel 12-V (D-S) MOSFET

21.5

20.2

18.2

(A)

= 25 °C, unless otherwise noted

29.5 nC

Steady State

L = 0.1 mH

(Typ.)

t ≤ 10 s

= 25 °C

= 70 °C

= 25 °C

= 70 °C

= 25 °C

= 70 °C

= 25 °C

= 70 °C

FEATURES

APPLICATIONS

• Halogen-free According to IEC 61249-2-21

• TrenchFET

• 100 % R

• Synchronous Rectifier

• Point-of-Load Synchronous Buck Converter

Symbol

Available

, T

thJA

thJF

stg

and UIS Tested

Power MOSFET

Typical

N-Channel MOSFET

- 55 to 150

16.1

12.9

2.50

Limit

2.3

1.6

21.5

17.2

4.45

2.85

± 8

4.0

b,c

Maximum

Vishay Siliconix

Si4866BDY

www.vishay.com

°C/W

Unit

°C

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