SI4866BDY-T1-GE3 Vishay, SI4866BDY-T1-GE3 Datasheet

MOSFET N-CH 12V 21.5A 8-SOIC

SI4866BDY-T1-GE3

Manufacturer Part Number
SI4866BDY-T1-GE3
Description
MOSFET N-CH 12V 21.5A 8-SOIC
Manufacturer
Vishay
Datasheet

Specifications of SI4866BDY-T1-GE3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.3 mOhm @ 12A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
21.5A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
80nC @ 4.5V
Input Capacitance (ciss) @ Vds
5020pF @ 6V
Power - Max
4.45W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.0053 Ohm @ 4.5 V
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
16.1 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
21.5A
Drain Source Voltage Vds
12V
On Resistance Rds(on)
7.4mohm
Rds(on) Test Voltage Vgs
8V
Threshold Voltage Vgs Typ
1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4866BDY-T1-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4866BDY-T1-GE3
Manufacturer:
VISHAY
Quantity:
2 500
Part Number:
SI4866BDY-T1-GE3
Manufacturer:
Freescale
Quantity:
255
Part Number:
SI4866BDY-T1-GE3
Manufacturer:
VISHAY
Quantity:
3 000
Part Number:
SI4866BDY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 90 °C/W.
Document Number: 70341
S09-0540-Rev. B, 06-Apr-09
Ordering Information: Si4866BDY-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
12
(V)
C
S
S
S
G
= 25 °C.
0.0053 at V
0.0074 at V
0.006 at V
1
2
3
4
Si4866BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
R
DS(on)
Top View
GS
GS
GS
SO-8
J
(Ω)
= 2.5 V
= 4.5 V
= 1.8 V
= 150 °C)
b,d
N-Channel 12-V (D-S) MOSFET
8
7
6
5
D
D
D
D
I
D
21.5
20.2
18.2
(A)
a
A
= 25 °C, unless otherwise noted
Q
29.5 nC
Steady State
g
T
T
T
L = 0.1 mH
T
T
T
T
T
T
T
C
C
C
C
C
A
A
A
A
A
(Typ.)
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• Synchronous Rectifier
• Point-of-Load Synchronous Buck Converter
Symbol
Symbol
T
J
R
R
Available
V
V
E
I
I
P
, T
I
DM
I
AS
thJA
thJF
DS
GS
AS
D
S
D
stg
g
and UIS Tested
®
Power MOSFET
Typical
G
40
23
N-Channel MOSFET
- 55 to 150
16.1
12.9
2.50
Limit
2.3
1.6
21.5
17.2
4.45
2.85
± 8
4.0
12
50
20
20
b,c
b,c
D
S
b,c
b,c
b,c
Maximum
50
28
Vishay Siliconix
Si4866BDY
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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SI4866BDY-T1-GE3 Summary of contents

Page 1

... Top View Ordering Information: Si4866BDY-T1-E3 (Lead (Pb)-free) Si4866BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy Maximum Power Dissipation ...

Page 2

... Si4866BDY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Q - Total Gate Charge (nC) g Gate Charge Document Number: 70341 S09-0540-Rev. B, 06-Apr-09 1 1.5 2.0 2 Si4866BDY Vishay Siliconix 2.0 1.6 25 °C 1 125 °C 0 °C 0.0 0.0 0.3 0.6 0 Gate-to-Source Voltage (V) GS Transfer Characteristics 7000 5600 C iss 4200 2800 ...

Page 4

... Si4866BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 10 150 ° °C 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.3 0.1 - 0.1 - 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.020 0.016 0.012 0.008 0.004 0.000 ...

Page 5

... S09-0540-Rev. B, 06-Apr- Case Temperature (°C) C Current Derating* 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si4866BDY Vishay Siliconix 100 125 150 2.0 1.6 1.2 0.8 0.4 0 100 T - Ambient Temperature (°C) A Power, Junction-to-Ambient www.vishay.com ...

Page 6

... Si4866BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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