SI4866BDY-T1-E3 Vishay, SI4866BDY-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SI4866BDY-T1-E3
• Description: N-CHANNEL 12-V (D-S) MOSFET
• Manufacturer: Vishay

Specifications of SI4866BDY-T1-E3

• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0053 Ohms
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 16.1 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

Si4866BDY
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
V
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
DS
GS(th)
Temperature Coefficient
Temperature Coefficient
b
a
a
a
J
= 25 °C, unless otherwise noted
a
ΔV
Symbol
ΔV
V
r
GS(th)
I
DS(on)
t
t
t
t
I
I
C
V
C
V
GS(th)
D(on)
C
Q
Q
d(on)
d(off)
d(on)
d(off)
I
GSS
DSS
Q
DS
g
Q
R
SM
I
t
t
t
DS
oss
t
t
t
t
SD
iss
rss
S
rr
gd
a
b
fs
gs
r
f
r
f
g
g
rr
/T
/T
J
J
I
F
V
New Product
V
V
= 9.5 A, di/dt = 100 A/µs, T
I
V
I
D
DS
D
DS
DS
DS
≅ 5 A, V
≅ 5 A, V
= 12 V, V
V
= 6 V, V
= 6 V, V
V
V
V
= 6 V, V
V
V
V
V
V
V
V
DS
DS
GS
DS
DS
GS
GS
DD
DD
DS
GS
Test Conditions
= V
= 0 V, V
≥ 5 V, V
= 0 V, I
= 12 V, V
= 4.5 V, I
= 2.5 V, I
= 6 V, R
= 6 V, R
= 15 V, I
I
= 1.8 V, I
GEN
T
D
GEN
f = 1 MHz
I
C
S
GS
GS
GS
= 250 µA
GS
GS
= 2.3 A
= 25 °C
, I
= 4.5 V, R
= 4.5 V, I
= 2.5 V, I
= 10 V, R
= 0 V, f = 1 MHz
= 0 V, T
D
D
GS
GS
L
L
= 250 µA
D
GS
D
D
= 250 µA
D
= 1.2 Ω
= 1.2 Ω
= 4.5 V
= 12 A
= ± 8 V
= 12 A
= 10 A
= 8 A
= 0 V
J
D
D
g
g
= 55 °C
J
= 10 A
= 10 A
= 1 Ω
= 1 Ω
= 25 °C
Min
0.4
12
20
0.0042
0.0048
0.006
5020
1305
- 3.5
29.5
0.62
Typ
805
6.2
8.9
0.8
12
80
52
26
18
85
32
13
12
57
50
35
19
31
9
S-71342-Rev. A, 09-Jul-07
Document Number: 70341
0.0053
0.0060
0.0074
± 100
Max
130
1.0
1.3
1.1
10
80
45
40
30
50
25
24
90
18
50
80
55
1
4
mV/°C
Unit
nA
µA
nC
nC
pF
ns
ns
ns
Ω
Ω
V
V
A
S
A
V