SI4866BDY-T1-E3 Vishay, SI4866BDY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4866BDY-T1-E3
• Description: N-CHANNEL 12-V (D-S) MOSFET
• Manufacturer: Vishay

Specifications of SI4866BDY-T1-E3

• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0053 Ohms
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 16.1 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 70341
S-71342-Rev. A, 09-Jul-07
0.0065
0.0060
0.0055
0.0050
0.0045
0.0040
4.5
3.6
2.7
1.8
0.9
0.0
50
40
30
20
10
On-Resistance vs. Drain Current and Gate Voltage
0
0.0
0
0
I
D
= 10 A
10
0.5
11
V
DS
Output Characteristics
Q
g
- Drain-to-Source Voltage (V)
V
V
V
I
- Total Gate Charge (nC)
GS
D
DS
GS
Gate Charge
- Drain Current (A)
20
1.0
= 1.8 V
= 6 V
22
= 2.5 V
V
DS
V
GS
= 4 V
= 4.5 V
30
1.5
33
V
DS
1.5 V
= 8 V
40
2.0
44
1 V
New Product
50
2.5
55
7000
5600
4200
2800
1400
2.0
1.6
1.2
0.8
0.4
0.0
1.5
1.3
1.1
0.9
0.7
0
0.0
- 50
0
I
D
On-Resistance vs. Junction Temperature
= 12 A
- 25
2
0.3
V
V
C
GS
Transfer Characteristics
DS
rss
T
0
J
T
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
C
4
= 125 °C
Capacitance
25
0.6
V
C
GS
iss
25 °C
= 1.8 V
6
50
Vishay Siliconix
C
0.9
oss
Si4866BDY
75
8
www.vishay.com
100
- 55 °C
V
1.2
GS
10
= 4.5 V
125
1.5
150
12
3