SI4866BDY-T1-E3 Vishay, SI4866BDY-T1-E3 Datasheet - Page 5
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SI4866BDY-T1-E3
Manufacturer Part Number
SI4866BDY-T1-E3
Description
N-CHANNEL 12-V (D-S) MOSFET
Manufacturer
Vishay
Specifications of SI4866BDY-T1-E3
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0053 Ohms
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
16.1 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4866BDY-T1-E3
Manufacturer:
VISHAY
Quantity:
20 000
Part Number:
SI4866BDY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
*The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 70341
S-71342-Rev. A, 09-Jul-07
6
5
4
3
2
1
0
0
25
D
Power, Junction-to-Foot
is based on T
T
C
50
- Case Temperature (°C)
75
J(max)
100
= 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
25
20
15
10
5
0
0
125
25
New Product
150
T
C
Current Derating*
50
- Case Temperature (°C)
75
100
2.0
1.6
1.2
0.8
0.4
0.0
0
125
25
Power, Junction-to-Ambient
150
T
C
50
- Case Temperature (°C)
75
Vishay Siliconix
Si4866BDY
100
www.vishay.com
125
150
5