PIC18F8525-I/PT Microchip Technology, PIC18F8525-I/PT Datasheet - Page 336

• Manufacturer Part Number: PIC18F8525-I/PT
• Description: IC PIC MCU FLASH 24KX16 80TQFP
• Manufacturer: Microchip Technology
• Series: PIC® 18Fr

Specifications of PIC18F8525-I/PT

• Core Processor: PIC
• Core Size: 8-Bit
• Speed: 40MHz
• Connectivity: EBI/EMI, I²C, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, LVD, POR, PWM, WDT
• Number Of I /o: 69
• Program Memory Size: 48KB (24K x 16)
• Program Memory Type: FLASH
• Eeprom Size: 1K x 8
• Ram Size: 3.75K x 8
• Voltage - Supply (vcc/vdd): 4.2 V ~ 5.5 V
• Data Converters: A/D 16x10b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 80-TFQFP
• Processor Series: PIC18F
• Core: PIC
• Data Bus Width: 8 bit
• Data Ram Size: 3840 B
• Interface Type: MSSP, SPI, I2C, EUSART
• Maximum Clock Frequency: 40 MHz
• Number Of Programmable I/os: 69
• Number Of Timers: 2 x 8 bit
• Operating Supply Voltage: 4.2 V to 5.5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: 52715-96, 52716-328, 52717-734, 52712-325, EWPIC18
• Development Tools By Supplier: PG164130, DV164035, DV244005, DV164005, PG164120, ICE2000, ICE4000, DV164136, DM163032
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 16 bit
• For Use With: XLT80PT3 - SOCKET TRAN ICE 80MQFP/TQFPAC164320 - MODULE SKT MPLAB PM3 80TQFPAC174011 - MODULE SKT PROMATEII 80TQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

PIC18F6525/6621/8525/8621
TABLE 27-4:
DS39612B-page 334
DC Characteristics
D110
D112
D113
D120
D121
D122
D123
D124
D130
D131
D132
D132A V
D132B V
D133
D133A T
D133A T
D134
Note 1:
Param
No.
2:
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
V
I
I
E
V
T
T
T
E
V
V
T
T
PP
DDP
Sym
DEW
RETD
REF
IE
IW
IW
RETD
PP
D
DRW
P
PR
IE
IW
PEW
only and are not tested.
Refer to Section 7.8 “Using the Data EEPROM” for a more detailed discussion on data EEPROM
endurance.
Required only if Low-Voltage Programming is disabled.
Internal Program Memory
Programming Specifications
Voltage on MCLR/V
Current into MCLR/V
Supply Current during
Programming
Data EEPROM Memory
Byte Endurance
V
Erase/Write Cycle Time
Characteristic Retention
Number of Total Erase/Write
Cycles before Refresh
Program Flash Memory
Cell Endurance
V
V
V
or Write
V
Row Erase
ICSP Block Erase Cycle Time
ICSP Erase or Write Cycle Time
(externally timed)
Self-Timed Write Cycle Time
Characteristic Retention
MEMORY PROGRAMMING REQUIREMENTS
DD
DD
DD
DD
DD
for Read/Write
for Read
for Block Erase
for Externally Timed Erase
for Self-Timed Write and
Characteristic
PP
PP
(1)
pin
pin
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ T
100K
100K
V
V
V
9.00
10K
10K
Min
1M
4.5
4.5
40
1K
40
—
—
—
—
—
MIN
MIN
MIN
1
Typ†
100K
100K
10M
10K
1M
1M
—
—
—
—
—
—
—
—
—
—
—
4
4
2
13.25
Max
300
1.0
5.5
5.5
5.5
5.5
5.5
—
—
—
—
—
—
—
—
—
—
—
—
-40°C ≤ T
Units
Year Provided no other
Year Provided no other
E/W
E/W
E/W
E/W
E/W
E/W
mA
ms
ms
ms
ms
µA
V
V
V
V
V
V
A
A
≤ +85°C for industrial
≤ +125°C for extended
 2005 Microchip Technology Inc.
(Note 2)
-40°C to +85°C
-40°C to +125°C
Using EECON to read/write
V
voltage
specifications are violated
-40°C to +85°C
-40°C to +125°C
-40°C to +85°C
-40°C to +125°C
V
voltage
Using ICSP™ port
Using ICSP port
V
voltage
V
V
specifications are violated
MIN
MIN
MIN
DD
DD
> 4.5V
> 4.5V
= Minimum operating
= Minimum operating
= Minimum operating
Conditions