TN6719A Fairchild Semiconductor, TN6719A Datasheet
TN6719A
Manufacturer Part Number
TN6719A
Description
TRANS GP NPN 300V 200MA TO-226
Manufacturer
Fairchild Semiconductor
Datasheet
1.TN6719A.pdf
(2 pages)
Specifications of TN6719A
Transistor Type
NPN
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
300V
Vce Saturation (max) @ Ib, Ic
750mV @ 3mA, 30mA
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 30mA, 10V
Power - Max
1W
Mounting Type
Through Hole
Package / Case
TO-92-3 (Long Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TN6719A
Manufacturer:
FSC
Quantity:
3 497
Company:
Part Number:
TN6719A
Manufacturer:
SHARP
Quantity:
8 630
1997 Fairchild Semiconductor Corporation
P
R
R
V
V
V
I
T
Symbol
Symbol
C
D
J
CEO
CBO
EBO
JC
JA
This device is designed for use in high voltage applications .
Absolute Maximum Ratings*
, T
*
NPN High Voltage Amplifier
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Sourced from Process 48. See MPSA42 for characteristics.
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
stg
Total Device Dissipation
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
Derate above 25 C
C
B
E
TN6719A
Characteristic
Parameter
TO-226
TA = 25°C unless otherwise noted
TA = 25°C unless otherwise noted
TN6719A
Discrete POWER & Signal
Max
125
1.0
8.0
50
-55 to +150
Value
300
300
200
7.0
Technologies
Units
mW/ C
Units
mA
C/W
C/W
V
V
V
W
C
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TN6719A Summary of contents
Page 1
... Thermal Resistance, Junction to Ambient R JA 1997 Fairchild Semiconductor Corporation TO-226 TA = 25°C unless otherwise noted Parameter TA = 25°C unless otherwise noted Discrete POWER & Signal Technologies Value Units 300 V 300 V 7.0 V 200 mA -55 to +150 C Max Units TN6719A 1.0 W 8.0 mW/ C 125 C/W 50 C/W ...
Page 2
Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Breakdown Voltage* (BR)CEO V Collector-Base Breakdown Voltage (BR)CBO V Emitter-Base Breakdown Voltage (BR)EBO I Collector Cutoff Current CBO I Emitter Cutoff Current EBO ON CHARACTERISTICS Current Gain FE Collector-Emitter Saturation ...