C8051F320-TB Silicon Laboratories Inc, C8051F320-TB Datasheet - Page 107

• Manufacturer Part Number: C8051F320-TB
• Description: BOARD PROTOTYPING W/C8051F320
• Manufacturer: Silicon Laboratories Inc
• Type: MCUr

Specifications of C8051F320-TB

• Contents: Board
• Processor To Be Evaluated: C8051F320/F321
• Interface Type: USB
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• For Use With/related Products: C8051F320
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

11.1.3. Flash Write Procedure
Flash bytes are programmed by software with the following sequence:
Steps 3-8 must be repeated for each byte to be written. After Flash writes are complete, PSWE should be
cleared so that MOVX instructions do not target program memory.
Table 11.1. Flash Electrical Characteristics
11.2. Non-volatile Data Storage
The Flash memory can be used for non-volatile data storage as well as program code. This allows data
such as calibration coefficients to be calculated and stored at run time. Data is written using the MOVX
write instruction and read using the MOVC instruction. Note: MOVX read instructions always target XRAM.
*Note: 512 bytes at location 0x3E00 to 0x3FFF are reserved.
Erase Cycle Time
Write Cycle Time
Parameter
Endurance
Flash Size
Step 1. Disable interrupts (recommended).
Step 2. Erase the 512-byte Flash page containing the target location, as described in Section
Step 3. Write the first key code to FLKEY: 0xA5.
Step 4. Write the second key code to FLKEY: 0xF1.
Step 5. Set the PSWE bit (register PSCTL).
Step 6. Clear the PSEE bit (register PSCTL).
Step 7. Using the MOVX instruction, write a single data byte to the desired location within the 512-
Step 8. Clear the PSWE bit (register PSCTL).
11.1.2.
byte sector.
25 MHz System Clock
25 MHz System Clock
C8051F320/1
Conditions
Rev. 1.4
16384*
Min
20k
10
40
100k
Typ
15
55
C8051F320/1
Max
20
70
Erase/Write
Units
bytes
ms
µs
107