MT18VDDT12872Y-265D2 Micron Technology Inc, MT18VDDT12872Y-265D2 Datasheet - Page 25
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MT18VDDT12872Y-265D2
Manufacturer Part Number
MT18VDDT12872Y-265D2
Description
MODULE SDRAM DDR 1GB 184DIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT18VDDT12872Y-265D2.pdf
(39 pages)
Specifications of MT18VDDT12872Y-265D2
Memory Type
DDR SDRAM
Memory Size
1GB
Speed
266MT/s
Package / Case
184-DIMM
Main Category
DRAM Module
Sub-category
DDR SDRAM
Module Type
184RDIMM
Device Core Size
72b
Organization
128Mx72
Total Density
1GByte
Chip Density
512Mb
Access Time (max)
750ps
Maximum Clock Rate
266MHz
Operating Supply Voltage (typ)
2.5V
Operating Current
2.61A
Number Of Elements
18
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
184
Mounting
Socket
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
pdf: 09005aef808a331f, source: 09005aef80858037
DD18C32_64_128_256x72G.fm - Rev. E 9/04 EN
43. Random address changing and 100 percent of
44. CKE must be active (high) during the entire time a
45. I
data changing at every transfer.
refresh command is executed. That is, from the
time the AUTO REFRESH command is registered,
CKE must be active at each rising clock edge, until
t
driven to a valid high or low logic level. I
similar to I
address and control inputs to remain stable.
Although I
I
REF later.
DD
DD
2N specifies the DQ, DQS, and DM to be
2
F
is “worst case.”
DD
DD
2
F
2
, I
F
DD
except I
2
N
, and I
DD
DD
2Q specifies the
2Q are similar,
DD
256MB, 512MB, 1GB, 2GB (x72, ECC, SR)
2Q is
25
46. Whenever the operating frequency is altered, not
47. Leakage number reflects the worst case leakage
48. When an input signal is indicated to be HIGH or
49. The -335 speed grade will operate with
including jitter, the DLL is required to be reset.
This is followed by 200 clock cycles (before READ
commands).
possible through the module pin, not what each
memory device contributes.
LOW, it is defined as a steady state logic HIGH or
LOW.
= 40ns and
frequency.
Micron Technology, Inc., reserves the right to change products or specifications without notice.
184-PIN DDR SDRAM RDIMM
t
RAS (MAX) = 120,000ns at any slower
©2004 Micron Technology, Inc. All rights reserved.
t
RAS (MIN)