MT16LSDF6464HG-133D2 Micron Technology Inc, MT16LSDF6464HG-133D2 Datasheet - Page 10

• Manufacturer Part Number: MT16LSDF6464HG-133D2
• Description: MODULE SDRAM 512MB 144SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT16LSDF6464HG-133D2

• Memory Type: SDRAM
• Memory Size: 512MB
• Speed: 133MHz
• Package / Case: 144-SODIMM
• Main Category: DRAM Module
• Sub-category: SDRAM
• Module Type: 144SODIMM
• Device Core Size: 64b
• Organization: 64Mx64
• Total Density: 512MByte
• Chip Density: 256Mb
• Access Time (max): 6/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Operating Current: 1.096A
• Number Of Elements: 16
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 144
• Mounting: Socket
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(Notes: 1, 5, 6; notes appear following the parameter tables) (V
ABSOLUTE MAXIMUM RATINGS*
Voltage on V
Voltage on Inputs, NC or I/O Pins
Operating Temperature,
Storage Temperature (plastic) ............ -55°C to +150°C
Power Dissipation ...................................................... 16W
32/64 Meg x 64 SDRAM SODIMM
SD16C32_64x64HG_A.pm6; Rev. A, Pub 7/01
PARAMETER/CONDITION
SUPPLY VOLTAGE
INPUT HIGH VOLTAGE: Logic 1; All inputs
INPUT LOW VOLTAGE: Logic 0; All inputs
INPUT LEAKAGE CURRENT:
Any input 0V ≤ V
(All other pins not under test = 0V)
OUTPUT LEAKAGE CURRENT: DQs are disabled;
0V ≤ V
OUTPUT LEVELS:
Output High Voltage (I
Output Low Voltage (I
T
A
Relative to V
Relative to V
(commercial) ....................................... 0°C to +70°C
OUT
≤ V
DD
, V
DD
Q
DD
SS
SS
IN
Q Supply
....................................... -1V to +4.6V
....................................... -1V to +4.6V
≤ V
DD
OUT
OUT
= 4mA)
= -4mA)
10
*Stresses greater than those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only, and functional
operation of the device at these or any other conditions
above those indicated in the operational sections of
this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
, V
SYMBOL
V
DD
DD
V
V
Q = +3.3V ±0.3V)
V
, V
V
I
OZ
I
OH
OL
IH
I
IL
DD
Q
MIN
-0.3
-80
-80
2.4
3
2
–
SDRAM SODIMM
256/512MB (x64)
V
DD
MAX
3.6
0.8
0.4
80
80
–
+ 0.3
PRELIMINARY
©2001, Micron Technology, Inc.
UNITS NOTES
µA
µA
V
V
V
V
V
22
22