MT9VDDF6472Y-335F1 Micron Technology Inc, MT9VDDF6472Y-335F1 Datasheet - Page 31

• Manufacturer Part Number: MT9VDDF6472Y-335F1
• Description: MODULE DDR SDRAM 512MB 184-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT9VDDF6472Y-335F1

• Memory Type: DDR SDRAM
• Memory Size: 512MB
• Speed: 167MHz
• Package / Case: 184-DIMM
• Main Category: DRAM Module
• Sub-category: DDR SDRAM
• Module Type: 184RDIMM
• Device Core Size: 72b
• Organization: 64Mx72
• Total Density: 512MByte
• Chip Density: 512Mb
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Operating Current: 1.575A
• Number Of Elements: 9
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 184
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1293; MT9VDDF6472Y-335F1

Table 23: Serial Presence-Detect Matrix
“1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”
pdf: 09005aef80e119b2, source: 09005aef807d56a1
DDF9C32_64x72G.fm - Rev. B 9/04 EN
48–61 Reserved
BYTE
36-40 Reserved
65-71 Manufacturer’s JEDEC ID Code
73-90 Module Part Number (ASCII)
31
32
33
34
35
41
42
43
44
45
46
47
62
63
64
72
91
92
93
Module Rank Density
Address and Command Setup Time,
note 3)
Address and Command Hold Time,
note 3)
Data/ Data Mask Input Setup Time,
Data/ Data Mask Input Hold Time,
Min Active Auto Refresh Time
Minimum Auto Refresh to Active/
Auto Refresh Command Period,
SDRAM Device Max Cycle Time,
SDRAM Device Max DQS-DQ Skew Time,
t
SDRAM Device Max Read Data Hold Skew
Facto,
Reserved
DIMM Height
SPD Revision
Checksum For Bytes 0–62
Manufacturer’s JEDEC ID Code
Manufacturing Location
PCB Identification Code
Identification Code (Continued)
Year of Manufacture in BCD
DQSQ
t
QHS
DESCRIPTION
t
RC
t
t
CK
RFC
t
t
DH
MAX
t
IH (See
t
DS
IS (See
13ns (-262/-26A/-265/-202)
0.50ns (-262/-26A/-265)
0.50ns (-262/-26A/-265)
0.75ns (-262/-26A/-265)
0.5ns (-262/-26A/-265)
75ns (-262/-26A/-265)
1ns (-262/-26A/-265)
1ns (-262/-26A/-265)
ENTRY (VERSION)
256MB or 512MB
65ns (-26A/-265)
60ns (-335/-262)
31
0.80ns (-335)
0.80ns (-335)
0.45ns (-335)
0.60ns (-202)
0.45ns (-335)
0.60ns (-202)
1.1ns (-202)
1.1ns (-202)
0.4ns (-335)
0.6ns (-202)
0.5ns (-335)
1.0ns (-202)
(Continued)
70ns (-202)
72ns (-335)
80ns (-202)
12ns (-335)
Release 1.0
MICRON
01–12
-26A
-335
-262
-265
-202
1-9
0
256MB, 512MB (x72, ECC, SR)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
184-PIN DDR SDRAM RDIMM
MT9VDDF3272
Variable Data
Variable Data
01–0C
01-09
CA
A0
A0
A0
D2
40
80
B0
80
B0
45
50
60
45
50
60
00
3C
41
46
48
4B
50
30
34
28
32
3C
50
75
00
01
00
10
35
2F
2C
00
FF
FF
©2004 Micron Technology, Inc. All rights reserved.
MT9VDDF6472
Variable Data
Variable Data
01–0C
01-09
A0
A0
A0
40
80
B0
80
B0
45
50
60
45
50
60
00
3C
41
46
48
4B
50
30
34
28
32
3C
50
75
00
01
00
10
76
13
40
70
0B
2C
00
FF