MT9VDDF6472Y-335F1 Micron Technology Inc, MT9VDDF6472Y-335F1 Datasheet - Page 19

• Manufacturer Part Number: MT9VDDF6472Y-335F1
• Description: MODULE DDR SDRAM 512MB 184-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT9VDDF6472Y-335F1

• Memory Type: DDR SDRAM
• Memory Size: 512MB
• Speed: 167MHz
• Package / Case: 184-DIMM
• Main Category: DRAM Module
• Sub-category: DDR SDRAM
• Module Type: 184RDIMM
• Device Core Size: 72b
• Organization: 64Mx72
• Total Density: 512MByte
• Chip Density: 512Mb
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Operating Current: 1.575A
• Number Of Elements: 9
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 184
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1293; MT9VDDF6472Y-335F1

Table 16: DDR SDRAM Component Electrical Characteristics and Recommended AC
Notes: 1–5, 8, 10, 12; notes appear on pages 20–23; 0°C
pdf: 09005aef80e119b2, source: 09005aef807d56a1
DDF9C32_64x72G.fm - Rev. B 9/04 EN
AC CHARACTERISTICS
PARAMETER
Address and control input hold time (slow slew rate)
Address and control input setup time (slow slew rate)
Address and Control input pulse width (for each input)
LOAD MODE REGISTER command cycle time
DQ-DQS hold, DQS to first DQ to go non-valid, per access
Data hold skew factor
ACTIVE to PRECHARGE command
ACTIVE to READ with Auto precharge command
ACTIVE to ACTIVE/AUTO REFRESH command period
AUTO REFRESH command period
ACTIVE to READ or WRITE delay
PRECHARGE command period
DQS read preamble
DQS read postamble
ACTIVE bank a to ACTIVE bank b command
DQS write preamble
DQS write preamble setup time
DQS write postamble
Write recovery time
Internal WRITE to READ command delay
Data valid output window
REFRESH to REFRESH command interval
Average periodic refresh interval
Terminating voltage delay to V
Exit SELF REFRESH to non-READ command
Exit SELF REFRESH to READ command
Operating Conditions (-26A, -265, -202) (Continued)
DD
T
A
19
+70°C; V
SYMBOL MIN
t
t
WPRES
t
t
t
t
t
t
t
WPRE
t
t
t
t
WPST
t
t
t
t
t
XSNR
XSRD
t
RPRE
MRD
RPST
t
REFC
t
WTR
t
QHS
RCD
RRD
REFI
VTD
IPW
RAS
RAP
t
t
t
RFC
WR
QH
na
IH
RC
RP
IS
S
S
256MB, 512MB (x72, ECC, SR)
DD
Micron Technology, Inc., reserves the right to change products or specifications without notice.
184-PIN DDR SDRAM RDIMM
t
t
= V
2.20
0.25
QHS
HP -
200
0.9
0.4
0.4
t
15
20
65
75
20
20
15
15
75
40
1
1
0
1
QH -
0
-26A/-265
DD
Q = +2.5V ±0.2V
t
120,000
DQSQ
MAX
0.75
70.3
1.1
0.6
0.6
7.8
t
t
MIN
2.20
0.25
HP -
QHS
200
1.1
1.1
0.9
0.4
0.4
16
20
70
80
20
20
15
15
80
40
t
0
1
0
QH -
©2004 Micron Technology, Inc. All rights reserved.
-202
t
120,000
DQSQ
MAX
70.3
1.1
0.6
0.6
7.8
1
UNITS NOTES
t
t
t
t
t
t
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
CK
CK
ns
CK
ns
CK
ns
CK
ns
µs
µs
ns
ns
CK
22, 23
31, 49
18, 19
12
12
44
38
38
17
22
21
21