BUK1M200-50SGTD,51 NXP Semiconductors, BUK1M200-50SGTD,51 Datasheet - Page 9
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BUK1M200-50SGTD,51
Manufacturer Part Number
BUK1M200-50SGTD,51
Description
MOSFET N-CH 50V 20SOIC
Manufacturer
NXP Semiconductors
Series
TOPFET™r
Type
Low Sider
Datasheet
1.BUK1M200-50SGTD51.pdf
(15 pages)
Specifications of BUK1M200-50SGTD,51
Input Type
Non-Inverting
Number Of Outputs
4
On-state Resistance
150 mOhm
Current - Output / Channel
1.3A
Operating Temperature
-40°C ~ 150°C
Mounting Type
Surface Mount
Package / Case
20-SOIC (7.5mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Voltage - Supply
-
Current - Peak Output
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057351518
Philips Semiconductors
9397 750 10955
Product data
Fig 14. Input-source current as a function of
Fig 16. Input-source current as a function of junction
T
(1) Input-source current; protection latched.
(2) Input-source current; normal operation.
(1) V
(2) V
(3) V
(4) V
(mA)
(mA)
I IS
j
I IS
2.4
1.6
0.8
= 25 C
6
4
2
0
0
input-source voltage; typical values.
temperature; typical values.
-50
IS
IS
IS
IS
0
= 5 V; protection latched
= 3 V; protection latched
= 5 V; normal operation
= 4 V; normal operation
(1)
(3)
(4)
(2)
2
0
(1)
(2)
50
4
100
6
V IS (V)
T j ( C)
03pa91
03pa86
150
8
Rev. 01 — 31 March 2003
Fig 15. Input clamping characteristic; input current as
Fig 17. Input-source reset voltage as a function of
V IS(rst)
T
t
(V)
r
j
(mA)
= 100 s
2.4
2.2
1.8
= 25 C
10
I I
8
6
4
2
0
2
a function of input-source voltage; typical
values.
junction temperature; typical values.
-50
0
BUK1M200-50SGTD
2
Quad channel logic level TOPFET
20
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
4
90
6
T j ( C)
V IS (V)
03pa79
03pa82
160
8
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