BUK1M200-50SGTD,51 NXP Semiconductors, BUK1M200-50SGTD,51 Datasheet - Page 10
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BUK1M200-50SGTD,51
Manufacturer Part Number
BUK1M200-50SGTD,51
Description
MOSFET N-CH 50V 20SOIC
Manufacturer
NXP Semiconductors
Series
TOPFET™r
Type
Low Sider
Datasheet
1.BUK1M200-50SGTD51.pdf
(15 pages)
Specifications of BUK1M200-50SGTD,51
Input Type
Non-Inverting
Number Of Outputs
4
On-state Resistance
150 mOhm
Current - Output / Channel
1.3A
Operating Temperature
-40°C ~ 150°C
Mounting Type
Surface Mount
Package / Case
20-SOIC (7.5mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Voltage - Supply
-
Current - Peak Output
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057351518
Philips Semiconductors
9397 750 10955
Product data
Fig 18. Overvoltage clamping characteristic; drain
V
(mA)
400
300
200
100
IS
I D
0
= 0 V; t
current as a function of drain-source voltage;
typical values.
57
p
= 300 s
59
61
63
65
V DS (V)
03pa83
67
Rev. 01 — 31 March 2003
Fig 19. Drain-source leakage current as a function of
V
I DSS
10 -5
10 -6
10 -7
10 -8
(A)
DS
junction temperature; typical values.
= 40 V; V
-50
BUK1M200-50SGTD
IS
= 0 V
0
Quad channel logic level TOPFET
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
50
100
T j ( C)
03pa84
150
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