BUK1M200-50SGTD,51 NXP Semiconductors, BUK1M200-50SGTD,51 Datasheet - Page 7

• Manufacturer Part Number: BUK1M200-50SGTD,51
• Description: MOSFET N-CH 50V 20SOIC
• Manufacturer: NXP Semiconductors
• Series: TOPFET™r
• Type: Low Sider

Specifications of BUK1M200-50SGTD,51

• Input Type: Non-Inverting
• Number Of Outputs: 4
• On-state Resistance: 150 mOhm
• Current - Output / Channel: 1.3A
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (7.5mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Supply: -
• Current - Peak Output: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057351518

Philips Semiconductors
9397 750 10955
Product data
Fig 6. Normalized drain-source on-state resistance
Fig 8. Output characteristics; drain current as a
2.5
1.5
0.5
(A)
I D
a
6
4
2
0
2
1
0
factor as a function of junction temperature.
function of drain-source voltage; typical values.
-50
0
a
=
----------------------------- -
R
DSon 25 C
R
DSon
5 V
2
0
4 V
3.4 V
50
V
4
IS
= 2.2 V
100
6
V DS (V)
2.8 V
T j ( C)
3.2 V
3 V
2.6 V
2.4 V
03pa71
03pa89
150
8
Rev. 01 — 31 March 2003
Fig 7. Drain-source on-state resistance as a function
Fig 9. Transfer characteristics; drain current as a
R DSon
(m )
T
j
500
375
250
125
(A)
I D
= 25 C; I
6
4
2
0
0
of input-source voltage; typical values.
function of input-source voltage; typical values.
0
0
BUK1M200-50SGTD
D
= 100 mA; t
1
2
Quad channel logic level TOPFET
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
p
= 300 s
4
2
6
3
V IS (V)
V IS (V)
03pa73
03pa88
8
4
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