BUK1M200-50SGTD,51 NXP Semiconductors, BUK1M200-50SGTD,51 Datasheet - Page 7
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BUK1M200-50SGTD,51
Manufacturer Part Number
BUK1M200-50SGTD,51
Description
MOSFET N-CH 50V 20SOIC
Manufacturer
NXP Semiconductors
Series
TOPFET™r
Type
Low Sider
Datasheet
1.BUK1M200-50SGTD51.pdf
(15 pages)
Specifications of BUK1M200-50SGTD,51
Input Type
Non-Inverting
Number Of Outputs
4
On-state Resistance
150 mOhm
Current - Output / Channel
1.3A
Operating Temperature
-40°C ~ 150°C
Mounting Type
Surface Mount
Package / Case
20-SOIC (7.5mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Voltage - Supply
-
Current - Peak Output
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057351518
Philips Semiconductors
9397 750 10955
Product data
Fig 6. Normalized drain-source on-state resistance
Fig 8. Output characteristics; drain current as a
2.5
1.5
0.5
(A)
I D
a
6
4
2
0
2
1
0
factor as a function of junction temperature.
function of drain-source voltage; typical values.
-50
0
a
=
----------------------------- -
R
DSon 25 C
R
DSon
5 V
2
0
4 V
3.4 V
50
V
4
IS
= 2.2 V
100
6
V DS (V)
2.8 V
T j ( C)
3.2 V
3 V
2.6 V
2.4 V
03pa71
03pa89
150
8
Rev. 01 — 31 March 2003
Fig 7. Drain-source on-state resistance as a function
Fig 9. Transfer characteristics; drain current as a
R DSon
(m )
T
j
500
375
250
125
(A)
I D
= 25 C; I
6
4
2
0
0
of input-source voltage; typical values.
function of input-source voltage; typical values.
0
0
BUK1M200-50SGTD
D
= 100 mA; t
1
2
Quad channel logic level TOPFET
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
p
= 300 s
4
2
6
3
V IS (V)
V IS (V)
03pa73
03pa88
8
4
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