BUK1M200-50SGTD,51 NXP Semiconductors, BUK1M200-50SGTD,51 Datasheet - Page 4

• Manufacturer Part Number: BUK1M200-50SGTD,51
• Description: MOSFET N-CH 50V 20SOIC
• Manufacturer: NXP Semiconductors
• Series: TOPFET™r
• Type: Low Sider

Specifications of BUK1M200-50SGTD,51

• Input Type: Non-Inverting
• Number Of Outputs: 4
• On-state Resistance: 150 mOhm
• Current - Output / Channel: 1.3A
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (7.5mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Supply: -
• Current - Peak Output: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057351518

Philips Semiconductors
4. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
[4]
[5]
[6]
[7]
9397 750 10955
Product data
Symbol
V
I
I
I
P
T
T
Overvoltage clamping
E
E
Overload protection
V
Reverse diode
I
Electrostatic discharge
V
D
I
IMS
S
DS
tot
stg
j
DS(CL)S
DS(CL)R
DS(prot)
esd
Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
Refer to overload protection characteristics.in
For a single active device.
For all devices active.
Not in an overload condition with drain current limiting.
At a drain-source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
With the protection supply provided via the input pin, the TOPFET is protected from short circuit loads. Overload protection operates by
means of drain current trip or by activating the overtemperature protection.
Parameter
drain-source voltage
drain current
input current
non-repetitive peak input current
total power dissipation
storage temperature
junction temperature
non-repetitive drain-source clamping energy
repetitive drain-source clamping energy
protected drain-source voltage
source (diode forward) current
electrostatic discharge voltage
Limiting values
[7]
[6]
Table
Rev. 01 — 31 March 2003
5.
Conditions
T
clamping
t
T
normal operation
T
load
T
V
T
C = 250 pF; R = 1.5 k
p
sp
sp
amb
sp
sp
IS
1 ms
= 25 C; I
25 C;
25 C;
125 C; I
4 V
25 C; V
Figure 5
Figure 4
IS
DM
DM
= 0 V
BUK1M200-50SGTD
= 1 A; f = 250 Hz
I
D(th)(trip)
Quad channel logic level TOPFET
; inductive
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
[1]
[2][3]
[4]
[5]
[3]
[3]
Min Max
-
-
-
-
-
-
-
-
-
-
-
55 +150
50
2.7
3
10
9.4
150
100
5
35
2
2
4 of 15
Unit
V
A
mA
mA
W
mJ
mJ
V
A
kV
C
C