BUK1M200-50SGTD,51 NXP Semiconductors, BUK1M200-50SGTD,51 Datasheet - Page 4
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BUK1M200-50SGTD,51
Manufacturer Part Number
BUK1M200-50SGTD,51
Description
MOSFET N-CH 50V 20SOIC
Manufacturer
NXP Semiconductors
Series
TOPFET™r
Type
Low Sider
Datasheet
1.BUK1M200-50SGTD51.pdf
(15 pages)
Specifications of BUK1M200-50SGTD,51
Input Type
Non-Inverting
Number Of Outputs
4
On-state Resistance
150 mOhm
Current - Output / Channel
1.3A
Operating Temperature
-40°C ~ 150°C
Mounting Type
Surface Mount
Package / Case
20-SOIC (7.5mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Voltage - Supply
-
Current - Peak Output
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057351518
Philips Semiconductors
4. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
[4]
[5]
[6]
[7]
9397 750 10955
Product data
Symbol
V
I
I
I
P
T
T
Overvoltage clamping
E
E
Overload protection
V
Reverse diode
I
Electrostatic discharge
V
D
I
IMS
S
DS
tot
stg
j
DS(CL)S
DS(CL)R
DS(prot)
esd
Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
Refer to overload protection characteristics.in
For a single active device.
For all devices active.
Not in an overload condition with drain current limiting.
At a drain-source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
With the protection supply provided via the input pin, the TOPFET is protected from short circuit loads. Overload protection operates by
means of drain current trip or by activating the overtemperature protection.
Parameter
drain-source voltage
drain current
input current
non-repetitive peak input current
total power dissipation
storage temperature
junction temperature
non-repetitive drain-source clamping energy
repetitive drain-source clamping energy
protected drain-source voltage
source (diode forward) current
electrostatic discharge voltage
Limiting values
[7]
[6]
Table
Rev. 01 — 31 March 2003
5.
Conditions
T
clamping
t
T
normal operation
T
load
T
V
T
C = 250 pF; R = 1.5 k
p
sp
sp
amb
sp
sp
IS
1 ms
= 25 C; I
25 C;
25 C;
125 C; I
4 V
25 C; V
Figure 5
Figure 4
IS
DM
DM
= 0 V
BUK1M200-50SGTD
= 1 A; f = 250 Hz
I
D(th)(trip)
Quad channel logic level TOPFET
; inductive
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
[1]
[2][3]
[4]
[5]
[3]
[3]
Min Max
-
-
-
-
-
-
-
-
-
-
-
55 +150
50
2.7
3
10
9.4
150
100
5
35
2
2
4 of 15
Unit
V
A
mA
mA
W
mJ
mJ
V
A
kV
C
C