buk1m200-50sgtd NXP Semiconductors, buk1m200-50sgtd Datasheet

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buk1m200-50sgtd

Manufacturer Part Number
buk1m200-50sgtd
Description
Quad Channel Logic Level Topfet
Manufacturer
NXP Semiconductors
Datasheet
1. Product profile
1.1 Description
1.2 Features
1.3 Applications
1.4 Quick reference data
Quad temperature and overload protected power switch based on TOPFET™ Trench
technology in a 20-pin surface mount plastic package.
Product availability:
Table 1:
[1]
Symbol
R
I
P
T
V
D
j
tot
DS
DSon
BUK1M200-50SGTD in SOT163-1 (SO20).
BUK1M200-50SGTD
Quad channel logic level TOPFET
Rev. 01 — 31 March 2003
Power TrenchMOS™
Overtemperature protection
Overload protection
Input-source voltage resets latched
protection circuitry.
Control of output stage and supply of
overload protection circuits derived
from input
Low-side driver
Pulse Width Modulation
All devices active.
Quick reference data
Parameter
drain-source on-state resistance
drain current
total power dissipation
junction temperature
drain-source voltage
5V logic compatible
Current trip protection
ESD protection for all pins
Overvoltage clamping for turn off of
inductive loads
Low operating input current permits
direct drive by micro-controller.
DC switching
General purpose switch for driving
lamps, motors, solenoids and heaters.
[1]
Min
-
-
-
-
-
Max
200
2.7
9.4
150
50
Product data
Unit
m
A
W
V
C

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buk1m200-50sgtd Summary of contents

Page 1

... Rev. 01 — 31 March 2003 1. Product profile 1.1 Description Quad temperature and overload protected power switch based on TOPFET™ Trench technology in a 20-pin surface mount plastic package. Product availability: BUK1M200-50SGTD in SOT163-1 (SO20). 1.2 Features Power TrenchMOS™ Overtemperature protection Overload protection Input-source voltage resets latched protection circuitry ...

Page 2

... Fig 1. Pinning; SOT163-1 (SO20). 2.1 Pin description Table 2: Symbol n. 9397 750 10955 Product data BUK1M200-50SGTD Fig 2. Symbol; Quad channel low-side TOPFET Pin description Pin Description 1, 11, 10, 20 not connected 2,19 drain 1 3 input 1 4,17 drain 2 5 input 2 ...

Page 3

... Philips Semiconductors 3. Block diagram 3 I1 VOLTAGE REGULATOR BUK1M200-50SGTD Fig 3. Elements of the quad channel TOPFET switch. 9397 750 10955 Product data BUK1M200-50SGTD CHANNEL 1 OVER VOLTAGE R IG gate SHORT CIRCUIT PROTECTION CONTROL LOGIC OVER TEMPERATURE CHANNEL 2 internal circuitry identical to CHANNEL1 ...

Page 4

... At a drain-source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients. [7] With the protection supply provided via the input pin, the TOPFET is protected from short circuit loads. Overload protection operates by means of drain current trip or by activating the overtemperature protection. 9397 750 10955 Product data BUK1M200-50SGTD Conditions Figure 5 sp ...

Page 5

... Fig 5. Continuous drain current as a function of solder point temperature. Conditions mounted on thermo clad board one device active all devices active Rev. 01 — 31 March 2003 BUK1M200-50SGTD Quad channel logic level TOPFET 03pa87 40 80 120 160 Min Typ Max ...

Page 6

... Figure 11 sp Figure 5.5 V; Figure 300 reduced from Rev. 01 — 31 March 2003 BUK1M200-50SGTD Quad channel logic level TOPFET Min Typ Max 300 100 - 0. 380 9 - 150 200 0 ...

Page 7

... I D 3 2 (V) Fig 9. Transfer characteristics; drain current as a function of input-source voltage; typical values. Rev. 01 — 31 March 2003 BUK1M200-50SGTD Quad channel logic level TOPFET 03pa73 (V) = 100 mA 300 03pa88 (V) © ...

Page 8

... V IS(th) (V) 2 1 Fig 13. Input-source threshold voltage as a function of junction temperature. Rev. 01 — 31 March 2003 BUK1M200-50SGTD Quad channel logic level TOPFET 03pb ( 300 03pa77 max. typ. min 100 150 ...

Page 9

... 100 s r Fig 17. Input-source reset voltage as a function of junction temperature; typical values. Rev. 01 — 31 March 2003 BUK1M200-50SGTD Quad channel logic level TOPFET 03pa79 (V) 03pa82 20 90 160 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. ...

Page 10

... 300 Fig 18. Overvoltage clamping characteristic; drain current as a function of drain-source voltage; typical values. 9397 750 10955 Product data BUK1M200-50SGTD 03pa83 DSS ( - ( Fig 19. Drain-source leakage current as a function of junction temperature ...

Page 11

... Fig 20. Test circuit for resistive load switching times. 9397 750 10955 Product data Conditions 250 mA Figure 20 and Fig 21. Resistive load switching waveforms. Rev. 01 — 31 March 2003 BUK1M200-50SGTD Quad channel logic level TOPFET Min Typ Max = 0.5 0 0.7 1.5 - 3.2 6.5 - 1.6 3.5 t d(on) ...

Page 12

... 0.49 0.32 13.0 7.6 10.65 1.27 0.36 0.23 12.6 7.4 10.00 0.013 0.51 0.30 0.419 0.050 0.055 0.009 0.49 0.29 0.394 REFERENCES JEDEC EIAJ MS-013 Rev. 01 — 31 March 2003 BUK1M200-50SGTD Quad channel logic level TOPFET detail 1.1 1.1 0.25 1.4 0.25 0.1 0.4 1.0 0.043 0.043 ...

Page 13

... Philips Semiconductors 9. Revision history Table 7: Revision history Rev Date CPCN Description 01 20030331 - Product data (9397 750 10955) 9397 750 10955 Product data BUK1M200-50SGTD Quad channel logic level TOPFET Rev. 01 — 31 March 2003 © Koninklijke Philips Electronics N.V. 2003. All rights reserved ...

Page 14

... TOPFET — trademark of Koninklijke Philips Electronics N.V. TrenchMOS — trademark of Koninklijke Philips Electronics N.V. Rev. 01 — 31 March 2003 Rev. 01 — 31 March 2003 BUK1M200-50SGTD BUK1M200-50SGTD Quad channel logic level TOPFET Quad channel logic level TOPFET Fax: + 24825 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. ...

Page 15

... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 31 March 2003 Document order number: 9397 750 10955 BUK1M200-50SGTD Quad channel logic level TOPFET ...

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