FSDM311A Fairchild Semiconductor, FSDM311A Datasheet - Page 5

• Manufacturer Part Number: FSDM311A
• Description: IC SWIT PWM GREEN OVP HV 8DIP
• Manufacturer: Fairchild Semiconductor

Specifications of FSDM311A

• Output Isolation: Isolated
• Frequency Range: 61 ~ 73kHz
• Voltage - Input: 7 ~ 20 V
• Voltage - Output: 650V
• Power (watts): 13W
• Operating Temperature: 25°C ~ 150°C
• Package / Case: 8-DIP (0.300", 7.62mm)
• On Resistance (max): 14 Ohms
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 25 C
• Maximum Power Dissipation: 1400 mW
• Mounting Style: Through Hole
• Supply Current: 1.5 mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2007 Fairchild Semiconductor Corporation
FSDM311A • Rev.1.0.2
Electrical Characteristics
T
SENSEFET SECTION
CONTROL SECTION
BURST MODE SECTION
PROTECTION SECTION
TOTAL DEVICE SECTION
Notes:
8.
9.
10. These parameters, although guaranteed, are not 100% tested in production.
ΔV
Symbol
V
A
R
V
=25°C unless otherwise specified.
V
BUR(HYS)
Δf
V
V
I
D
C
C
V
V
C
t
t
DELAY
I
DS(ON)
f
Q
START
T
V
Q
REF
d(on)
d(off)
t
I
Q
OSC
STOP
I
BURH
I
I
DSS
g
BURL
S/S
LIM
OSS
RSS
MAX
REF
OVP
OP
CH
Pulse test: Pulse width ≤ 300µs, duty ≤ 2%.
These parameters, although guaranteed, are tested in EDS (wafer test) process.
FB
t
t
OSC
ISS
SD
SD
fs
r
f
gs
gd
g
/ΔT
Zero-Gate-Voltage Drain Current
Drain-Source On-State Resistance
Forward Trans-Conductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain (Miller) Charge
Switching Frequency
Switching Frequency Variation
Maximum Duty Cycle
UVLO Threshold Voltage
Feedback Source Current
Internal Soft-Start Time
Reference Voltage
Reference Voltage Variation
with Temperature
Burst Mode Voltage
Peak Current Limit
Thermal Shutdown Temperature
Shutdown Feedback Voltage
Over-Voltage Protection
Shutdown Delay Current
Operating Supply Current
Start-up Charging Current
Parameter
(9, 10)
(10)
(control part only)
(9)
(10)
(8)
V
V
V
V
V
V
V
DS
DS
GS
DS
GS
DS
GS
-25°C ≤ T
V
V
0V ≤ V
-25°C ≤ T
T
Hysteresis
di/dt=90mA/µs
3V ≤ V
V
V
J
FB
FB
CC
CC
=650V, V
=520V, V
=50V, I
=325V, I
=10V, I
=0V, V
=10V, I
=25°C
=GND
=GND
=0V, V
≤ 16V
FB
FB
5
Conditions
DS
D
D
D
≤ 3V
≤ V
A
A
=0.5A
=0.5A
=1.0A, V
D
STR
=25V, f=1MHz
GS
GS
=1.0A
≤ 85°C
≤ 85°C
SD
=0V
=0V, T
=50V
DS
C
=325V
=125°C
0.500 0.575 0.650
Min.
0.35
0.45
125
450
1.0
4.2
0.6
4.0
61
60
10
20
8
6
4
Typ. Max.
0.40
0.55
162
150
145
550
1.3
3.8
9.5
7.0
3.1
0.4
4.5
0.3
0.7
4.5
1.5
18
19
67
67
14
33
42
±5
15
9
7
5
0.45
0.65
200
±10
650
4.8
0.6
0.8
5.0
3.0
25
19
73
74
10
20
www.fairchildsemi.com
8
6
mV/°C
Unit
KHz
mA
mA
mV
mA
ms
nC
µA
µA
pF
°C
ns
%
%
Ω
S
V
V
V
V
V
A
V
V