PSD4235G2V-12UI STMicroelectronics, PSD4235G2V-12UI Datasheet - Page 39

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PSD4235G2V-12UI

Manufacturer Part Number
PSD4235G2V-12UI
Description
IC FLASH 4MBIT 120NS 80TQFP
Manufacturer
STMicroelectronics
Datasheet

Specifications of PSD4235G2V-12UI

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
4M (512K x 8)
Speed
120ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
80-TQFP, 80-VQFP
Number Of Macrocells
24
Maximum Operating Frequency
25.6 MHz
Delay Time
90 ns
Operating Supply Voltage
3 V to 3.6 V
Maximum Operating Temperature
85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-1970

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PSD4235G2V-12UI
Manufacturer:
STMicroelectronics
Quantity:
10 000
PSD4235G2
8
8.1
Instructions
An instruction consists of a sequence of specific operations. Each received byte is
sequentially decoded by the PSD and not executed as a standard WRITE operation. The
instruction is executed when the correct number of bytes are properly received and the time
between two consecutive bytes is shorter than the timeout period. Some instructions are
structured to include READ operations after the initial WRITE operations.
The instruction must be followed exactly. Any invalid combination of instruction bytes or
timeout between two consecutive bytes while addressing Flash memory resets the device
logic into READ mode (Flash memory is read like a ROM device).
The PSD supports the instructions summarized in
These instructions are detailed in
two bytes of an instruction are the coded cycles and are followed by an instruction byte or
confirmation byte. The coded cycles consist of writing the data AAh to address XAAAh
during the first cycle and data 55h to address X554h during the second cycle (unless the
Bypass instruction feature is used, as described later). Address signals A15-A12 are Don’t
Care during the instruction WRITE cycles. However, the appropriate Sector Select signal
(FS0-FS7, or CSBOOT0-CSBOOT3) must be selected.
The primary and secondary Flash memories have the same instruction set (except for Read
Primary Flash Identifier). The Sector Select signals determine which Flash memory is to
receive and execute the instruction. The primary Flash memory is selected if any one of its
Sector Select signals (FS0-FS7) is high, and the secondary Flash memory is selected if any
one of its Sector Select signals (CSBOOT0-CSBOOT3) is high.
Power-up condition
The PSD internal logic is reset upon Power-up to the READ mode. Sector Select (FS0-FS7
and CSBOOT0-CSBOOT3) must be held low, and Write Strobe (WR/WRL, CNTL0) high,
during Power-up for maximum security of the data contents and to remove the possibility of
data being written on the first edge of Write Strobe (WR/WRL, CNTL0). Any WRITE cycle
initiation is locked when V
Erase memory by chip or sector
Suspend or resume sector erase
Program a Word
Reset to READ mode
Read primary Flash Identifier value
Read Sector Protection Status
Bypass
CC
is below V
Table
LKO
29. For efficient decoding of the instructions, the first
.
Table
29:
Instructions
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