MT47H64M8B6-25E L:D TR Micron Technology Inc, MT47H64M8B6-25E L:D TR Datasheet - Page 97

• Manufacturer Part Number: MT47H64M8B6-25E L:D TR
• Description: IC DDR2 SDRAM 512MBIT 60VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr

Specifications of MT47H64M8B6-25E L:D TR

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 2.5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-FBGA
• Organization: 64Mx8
• Density: 512Mb
• Address Bus: 16b
• Access Time (max): 400ps
• Maximum Clock Rate: 800MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: 0C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 205mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1427-2

Figure 47: Multibank Activate Restriction
PDF: 09005aef82f1e6e2
Rev. M 9/08 EN
Bank address
Command
Address
CK#
CK
Bank a
ACT
Row
T0
Note:
t RRD (MIN)
READ
Bank a
Col
T1
1. DDR2-533 (-37E, x4 or x8),
t
FAW (MIN) = 37.5ns.
Bank b
Row
ACT
T2
READ
Bank b
Col
T3
Bank c
Row
ACT
T4
97
t
CK = 3.75ns, BL = 4, AL = 3, CL = 4,
t FAW (MIN)
READ
Bank c
Col
T5
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Bank d
Row
ACT
T6
512Mb: x4, x8, x16 DDR2 SDRAM
READ
Bank d
Col
T7
NOP
T8
© 2004 Micron Technology, Inc. All rights reserved.
t
RRD (MIN) = 7.5ns,
NOP
T9
ACTIVATE
Don’t Care
Bank e
Row
T10
ACT