MT47H64M8B6-25E L:D TR Micron Technology Inc, MT47H64M8B6-25E L:D TR Datasheet - Page 15

• Manufacturer Part Number: MT47H64M8B6-25E L:D TR
• Description: IC DDR2 SDRAM 512MBIT 60VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr

Specifications of MT47H64M8B6-25E L:D TR

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 2.5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-FBGA
• Organization: 64Mx8
• Density: 512Mb
• Address Bus: 16b
• Access Time (max): 400ps
• Maximum Clock Rate: 800MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: 0C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 205mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1427-2

Ball Assignments and Descriptions
Figure 6: 60-Ball FBGA – x4, x8 Ball Assignments (Top View)
PDF: 09005aef82f1e6e2
Rev. M 9/08 EN
A
D
G
H
B
C
K
E
F
L
J
NF, DQ6
NF, DQ4
VddQ
VddL
Vdd
Vdd
RFU
Vss
1
NF, RDQS#/NU
VssQ
VssQ
DQ1
Vref
BA0
CKE
A10
A12
A3
A7
2
DM, DM/RDQS
VddQ
WE#
DQ3
BA1
RFU
Vss
Vss
A1
A5
A9
3
15
4
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Ball Assignments and Descriptions
512Mb: x4, x8, x16 DDR2 SDRAM
5
6
VddQ
VssDL
RAS#
CAS#
VssQ
DQS
DQ2
A11
RFU
A2
A6
7
© 2004 Micron Technology, Inc. All rights reserved.
DQS#/NU
VssQ
VssQ
DQ0
CK#
A13
CS#
CK
A0
A4
A8
8
NF, DQ7
NF, DQ5
VddQ
VddQ
ODT
Vdd
Vdd
Vss
9