MT47H64M8B6-25E L:D TR Micron Technology Inc, MT47H64M8B6-25E L:D TR Datasheet - Page 89

• Manufacturer Part Number: MT47H64M8B6-25E L:D TR
• Description: IC DDR2 SDRAM 512MBIT 60VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr

Specifications of MT47H64M8B6-25E L:D TR

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 2.5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-FBGA
• Organization: 64Mx8
• Density: 512Mb
• Address Bus: 16b
• Access Time (max): 400ps
• Maximum Clock Rate: 800MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: 0C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 205mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1427-2

Figure 41: READ Latency
Figure 42: WRITE Latency
PDF: 09005aef82f1e6e2
Rev. M 9/08 EN
DQS, DQS#
Command
DQS, DQS#
Command
CK#
DQ
CK
CK#
DQ
CK
ACTIVE n
ACTIVE n
T0
T0
Notes:
Notes:
READ n
T1
WRITE n
1. BL = 4.
2. Shown with nominal
3. RL = AL + CL = 5.
1. BL = 4.
2. CL = 3.
3. WL = AL + CL - 1 = 4.
t RCD (MIN)
T1
t RCD (MIN)
AL = 2
NOP
T2
AL = 2
NOP
T2
NOP
T3
WL = AL + CL - 1 = 4
t
AC,
RL = 5
NOP
T3
89
t
DQSCK, and
NOP
T4
CL = 3
CL - 1 = 2
NOP
Micron Technology, Inc. reserves the right to change products or specifications without notice.
T4
t
DQSQ.
512Mb: x4, x8, x16 DDR2 SDRAM
NOP
T5
Extended Mode Register (EMR)
NOP
T5
DI
n
NOP
T6
Transitioning Data
DO
n + 1
n
DI
Transitioning Data
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n + 1
DO
NOP
n + 2
T6
DI
NOP
T7
n + 2
DO
n + 3
DI
n + 3
DO
Don’t Care
Don’t Care
NOP
NOP
T7
T8