MT47H64M8B6-25E L:D TR Micron Technology Inc, MT47H64M8B6-25E L:D TR Datasheet - Page 137

IC DDR2 SDRAM 512MBIT 60VFBGA

MT47H64M8B6-25E L:D TR

Manufacturer Part Number
MT47H64M8B6-25E L:D TR
Description
IC DDR2 SDRAM 512MBIT 60VFBGA
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr

Specifications of MT47H64M8B6-25E L:D TR

Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
512M (64M x 8)
Speed
2.5ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 85°C
Package / Case
60-FBGA
Organization
64Mx8
Density
512Mb
Address Bus
16b
Access Time (max)
400ps
Maximum Clock Rate
800MHz
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
0C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
205mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1427-2
Figure 88: ODT Turn-On Timing When Entering Power-Down Mode
PDF: 09005aef82f1e6e2
Rev. M 9/08 EN
Command
ODT
ODT
CK#
CKE
Rtt
Rtt
CK
NOP
T0
NOP
T1
Transitioning Rtt
137
NOP
T2
t AON (MIN)
t AOND
NOP
Micron Technology, Inc. reserves the right to change products or specifications without notice.
T3
t ANPD (MIN)
Rtt Unknown
512Mb: x4, x8, x16 DDR2 SDRAM
t AONPD (MAX)
t AONPD (MIN)
NOP
T4
t AON (MAX)
NOP
Rtt On
T5
© 2004 Micron Technology, Inc. All rights reserved.
NOP
T6
Don’t Care
ODT Timing

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