MT47H64M8B6-25E L:D TR Micron Technology Inc, MT47H64M8B6-25E L:D TR Datasheet - Page 122

• Manufacturer Part Number: MT47H64M8B6-25E L:D TR
• Description: IC DDR2 SDRAM 512MBIT 60VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr

Specifications of MT47H64M8B6-25E L:D TR

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 2.5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-FBGA
• Organization: 64Mx8
• Density: 512Mb
• Address Bus: 16b
• Access Time (max): 400ps
• Maximum Clock Rate: 800MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: 0C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 205mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1427-2

Figure 71: Self Refresh
PDF: 09005aef82f1e6e2
Rev. M 9/08 EN
DQS#, DQS
Command
Address
ODT 6
CKE 1
CK#
CK 1
DM
DQ
t AOFD/ t AOFPD 6
NOP
T0
t CH
t RP 8
Notes:
Enter self refresh
mode (synchronous)
t CL
REF
10. Upon exiting SELF REFRESH, ODT must remain LOW until
T1
1. Clock must be stable and meeting
2. Self refresh exit is asynchronous; however,
3. CKE must stay HIGH until
4. NOP or DESELECT commands are required prior to exiting self refresh until state Tc0,
5.
6. ODT must be disabled and Rtt off (
7.
8. Device must be in the all banks idle state prior to entering self refresh mode.
9. After self refresh has been entered,
refresh mode and at least 1 ×
ing clock edge where CKE HIGH satisfies
may go back LOW after
which allows any nonREAD command.
t
ing self refresh at state T1.
t
refresh.
XSNR is required before any nonREAD command can be applied.
XSRD (200 cycles of CK) is required before a READ command can be applied at state Td0.
t CK 1
T2
t CKE (MIN) 9
Ta0
t
t CK 1
XSNR is satisfied.
122
t
Exit self refresh
mode (asynchronous)
XSRD is met; however, if self refresh is being re-entered, CKE
t
Ta1
CK prior to exiting self refresh mode.
t
t
CK specifications at least 1 ×
AOFD and
t
Micron Technology, Inc. reserves the right to change products or specifications without notice.
CKE (MIN) must be satisfied prior to exiting self
t ISXR 2
NOP 4
512Mb: x4, x8, x16 DDR2 SDRAM
t
ISXR.
Ta2
t
XSNR and
t
t CKE 3
AOFPD have been satisfied) prior to enter-
t XSNR 2, 5, 10
NOP 4
Tb0
t
Indicates a break in
time scale
XSRD timing starts at the first ris-
t XSRD 2, 7
t
XSRD is satisfied.
© 2004 Micron Technology, Inc. All rights reserved.
Valid 5
Valid
t
CK after entering self
Tc0
SELF REFRESH
Don’t Care
Valid 7
Valid 5
Td0
t IH
t IH