MT48H32M16LFCJ-75 L IT:A TR Micron Technology Inc, MT48H32M16LFCJ-75 L IT:A TR Datasheet - Page 39

IC SDRAM 512MBIT 133MHZ 54VBGA

MT48H32M16LFCJ-75 L IT:A TR

Manufacturer Part Number
MT48H32M16LFCJ-75 L IT:A TR
Description
IC SDRAM 512MBIT 133MHZ 54VBGA
Manufacturer
Micron Technology Inc

Specifications of MT48H32M16LFCJ-75 L IT:A TR

Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
512M (32Mx16)
Speed
133MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-40°C ~ 85°C
Package / Case
54-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1331-2
Figure 32:
PDF: 09005aef81ca5de4/Source: 09005aef81ca5e03
MT48H32M16LF_1.fm - Rev. J 2/08 EN
READ With Auto Precharge Interrupted by a WRITE
Notes:
Internal
States
1. DQM is HIGH at T2 to prevent D
COMMAND
ADDRESS
BANK m
BANK n
DQM
CLK
DQ
1
Active
Page
READ - AP
BANK n,
BANK n
COL a
T0
READ with Burst of 4
Page Active
T1
NOP
CL = 3 (bank n)
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
T2
39
NOP
OUT
a + 1 from contending with D
T3
D
NOP
OUT
a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
BANK m,
WRITE - AP
COL d
BANK m
T4
D
d
IN
Interrupt Burst, Precharge
WRITE with Burst of 4
T5
d + 1
NOP
D
IN
t
RP - BANK n
T6
d + 2
NOP
D
©2005 Micron Technology, Inc. All rights reserved.
IN
IN
d at T4.
DON’T CARE
T7
t WR - BANK m
d + 3
NOP
D
IN
Write-Back
Idle
Operations

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