MT48H4M16LFB4-10 Micron Technology Inc, MT48H4M16LFB4-10 Datasheet - Page 51

• Manufacturer Part Number: MT48H4M16LFB4-10
• Description: IC SDRAM 64MBIT 100MHZ 54VFBGA
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48H4M16LFB4-10

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 64M (4M x 16)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Organization: 4Mx16
• Density: 64Mb
• Address Bus: 14b
• Access Time (max): 8/7ns
• Maximum Clock Rate: 104MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 50mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NOTE:
NOTE:
pdf: 09005aef80a63953, source: 09005aef808a7edc
Y25L_64Mb_2.fm - Rev. E 11/04 EN
DQMU, DQML
1. For this example, the burst length = 4.
2. A9 and A11 = “Don’t Care.”
1. CAS latency indicated in parentheses.
SYMBOL
COMMAND
A0-A9, A11
t
t
t
t
AC (3)
AC (2)
CK (3)
CK (2)
t
BA0, BA1
t
t
t
CKH
t
t
CKS
AH
CH
AS
CL
CLK
CKE
A10
DQ
1
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
BANK 0
MIN
T0
ROW
ROW
2.5
9.6
2.5
1
3
3
8
1
t CKH
t CMH
t AH
t AH
t AH
-8
t RCD - BANK 0
t RAS - BANK 0
t
t
RC - BANK 0
RRD
MAX
t CK
100
100
7
8
T1
NOP
Figure 47: Alternating Bank Write Accesses
MIN
ENABLE AUTO PRECHARGE
2.5
9.6
2.5
12
1
3
3
1
t CMS
t CL
t DS
COLUMN m 2
-10
BANK 0
WRITE
T2
D
IN
MAX
t CMH
t CH
t DH
m
100
100
7
8
t DS
D
UNITS
IN
T3
NOP
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
m + 1
t DH
t DS
D
BANK 1
ACTIVE
IN
ROW
T4
ROW
m + 2
t DH
51
SYMBOL
t
t
WR (m)
t RCD - BANK 1
WR (a)
t
t
t
t
CMH
CMS
t
RCD
t
RAS
t
t
DH
DS
RC
RP
t DS
D
IN
T5
NOP
m + 3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t DH
t WR - BANK 0
1 CLK
ENABLE AUTO PRECHARGE
MIN
+7ns
2.5
2.5
48
80
19
19
15
1
1
t DS
COLUMN b 2
BANK 1
WRITE
T6
D
IN
-8
t DH
b
120,000
MAX
t DS
t RP - BANK 0
D
NOP
T7
IN
b + 1
1 CLK +5ns
t DH
1
MOBILE SDRAM
MIN
©2003 Micron Technology, Inc. All rights reserved.
100
2.5
2.5
50
20
20
15
1
1
t DS
D
IN
NOP
T8
b + 2
-10
t DH
64Mb: x16
120,000
MAX
t DS
D
BANK 0
ACTIVE
IN
T9
ROW
ROW
b + 3
t
t
DON’T CARE
RCD - BANK 0
WR - BANK 1
t DH
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
–