MT48H4M16LFB4-10 Micron Technology Inc, MT48H4M16LFB4-10 Datasheet - Page 45

• Manufacturer Part Number: MT48H4M16LFB4-10
• Description: IC SDRAM 64MBIT 100MHZ 54VFBGA
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48H4M16LFB4-10

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 64M (4M x 16)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Organization: 4Mx16
• Density: 64Mb
• Address Bus: 14b
• Access Time (max): 8/7ns
• Maximum Clock Rate: 104MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 50mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NOTE:
NOTE:
pdf: 09005aef80a63953, source: 09005aef808a7edc
Y25L_64Mb_2.fm - Rev. E 11/04 EN
1. For this example, the CAS latency = 2.
2. A9 and A11 = “Don’t Care.”
3. Page left open; no
1. CAS latency indicated in parentheses.
SYMBOL
t
t
t
t
AC (3)
AC (2)
CK (3)
CK (2)
t
t
t
t
CKH
t
t
CKS
AH
CH
AS
CL
DQMU, DQML
COMMAND
A0-A9, A11
BA0, BA1
1
CKE
CLK
A10
DQ
MIN
2.5
9.6
2.5
1
3
3
8
1
t CKS
t CMS
t AS
t AS
t AS
ACTIVE
-8
BANK
T0
ROW
ROW
t CKH
MAX
t CMH
t AH
t AH
t AH
100
100
t
RP.
7
8
t RCD
t CL
T1
MIN
NOP
2.5
9.6
2.5
12
t CH
1
3
3
1
-10
t CMS
Figure 41: READ – Full-page Burst
t CK
COLUMN m 2
MAX
100
100
T2
BANK
READ
7
8
t CMH
CAS Latency
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
T3
NOP
t LZ
t AC
T4
D
NOP
OUT
t OH
256 (x16) locations within same row
m
45
t AC
Full-page burst does not self-terminate.
Can use BURST TERMINATE command.
D
T5
OUT
NOP
SYMBOL
t OH
m+1
t
t
Full page completed
t
t
HZ (3)
HZ (2)
t
t
t
t AC
CMH
CMS
t
RCD
RRD
Micron Technology, Inc., reserves the right to change products or specifications without notice.
RAS
t
t
t
OH
RC
RP
LZ
D
T6
NOP
OUT
t OH
t AC
m+2
MIN
(
(
(
(
(
)
)
)
)
)
(
(
(
(
(
(
)
)
)
)
)
)
2.5
(
(
(
(
(
(
(
(
(
)
(
)
(
)
48
80
19
19
16
)
)
)
(
)
(
)
(
)
(
)
(
(
)
)
)
)
)
)
)
(
(
(
(
)
(
)
(
)
)
)
)
1
1
3
Tn + 1
D
NOP
OUT
1
-8
t OH
120,000
m-1
MAX
t AC
7
8
BURST TERM
Tn + 2
3
MOBILE SDRAM
D
OUT
©2003 Micron Technology, Inc. All rights reserved.
t OH
m
MIN
2.5
t AC
50
66
20
20
20
1
1
3
Tn + 3
64Mb: x16
D
-10
OUT
NOP
DON’T CARE
UNDEFINED
120,000
t OH
m+1
t HZ
MAX
7
8
Tn + 4
NOP
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns