MT48H4M16LFB4-10 Micron Technology Inc, MT48H4M16LFB4-10 Datasheet - Page 42

• Manufacturer Part Number: MT48H4M16LFB4-10
• Description: IC SDRAM 64MBIT 100MHZ 54VFBGA
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48H4M16LFB4-10

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 64M (4M x 16)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Organization: 4Mx16
• Density: 64Mb
• Address Bus: 14b
• Access Time (max): 8/7ns
• Maximum Clock Rate: 104MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 50mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NOTE:
NOTE:
pdf: 09005aef80a63953, source: 09005aef808a7edc
Y25L_64Mb_2.fm - Rev. E 11/04 EN
1. For this example, the burst length = 4, the CAS latency = 2, and the READ burst is followed by a “manual” PRECHARGE.
2. A9 and A11 = “Don’t Care.”
3. PRECHARGE command not allowed or
1. CAS latency indicated in parentheses.
SYMBOL
t
t
t
t
AC (3)
AC (2)
CK (3)
CK (2)
t
t
t
CKH
t
t
t
CKS
AH
CH
AS
CL
1
DQMU, DQML
COMMAND
A0-A9, A11
BA0, BA1
MIN MAX MIN MAX
2.5
9.6
2.5
1
3
3
8
1
CKE
CLK
A10
DQ
-8
t CMS
t CKS
t AS
t AS
t AS
100
100
ACTIVE
7
8
ROW
ROW
T0
BANK
Figure 38: Single READ – Without Auto Precharge
t CMH
t CKH
t AH
t AH
t AH
t RCD
t RAS
t RC
2.5
9.6
2.5
12
1
3
3
1
t CK
-10
T1
NOP
100
100
DISABLE AUTO PRECHARGE
7
8
t CMS
t CL
COLUMN m
BANK
T2
READ
t
UNITS
RAS would be violated.
t CMH
t CH
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
CAS Latency
2
T3
NOP
t LZ
3
t AC
42
T4
D
NOP
OUT
t OH
t HZ
3
m
SINGLE BANKS
PRECHARGE
ALL BANKS
BANK(S)
SYMBOL
T5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
t
t
HZ (3)
HZ (2)
t
t
t
CMH
t
CMS
RCD
RAS
t
t
t
OH
t RP
RC
RP
LZ
T6
NOP
MIN
2.5
48
80
19
19
1
1
3
ACTIVE
-8
ROW
BANK
120,000
T7
ROW
MAX
7
8
MOBILE SDRAM
©2003 Micron Technology, Inc. All rights reserved.
DON’T CARE
UNDEFINED
1
T8
NOP
MIN
2.5
50
66
20
20
1
1
3
64Mb: x16
-10
120,000
MAX
7
8
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns