MT48H4M16LFB4-10 Micron Technology Inc, MT48H4M16LFB4-10 Datasheet - Page 35

IC SDRAM 64MBIT 100MHZ 54VFBGA

MT48H4M16LFB4-10

Manufacturer Part Number
MT48H4M16LFB4-10
Description
IC SDRAM 64MBIT 100MHZ 54VFBGA
Manufacturer
Micron Technology Inc
Type
SDRAMr
Datasheet

Specifications of MT48H4M16LFB4-10

Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
64M (4M x 16)
Speed
100MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 70°C
Package / Case
54-VFBGA
Organization
4Mx16
Density
64Mb
Address Bus
14b
Access Time (max)
8/7ns
Maximum Clock Rate
104MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
50mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT48H4M16LFB4-10
Manufacturer:
MICRON
Quantity:
4 000
Part Number:
MT48H4M16LFB4-10
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT48H4M16LFB4-10 IT
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT48H4M16LFB4-10 IT TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT48H4M16LFB4-10 TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT48H4M16LFB4-10:H
Manufacturer:
MICRON
Quantity:
4 000
NOTE:
NOTE:
pdf: 09005aef80a63953, source: 09005aef808a7edc
Y25L_64Mb_2.fm - Rev. E 11/04 EN
1. PRE = PRECHARGE command, LMR = LOAD MODE REGISTER command, AR = AUTO REFRESH command, ACT = ACTIVE
2. Optional refresh command.
3. Device timing is -10 with 104 MHz clock.
1. CAS latency indicated in parentheses.
SYMBOL
t
t
command, RA = Row Address, BA = Bank Address
CK (3)
CK (2)
t
t
t
t
AH
AS
CH
CL
DQML, DQMU
1
COMMAND
A0-A9, A11
BA0, BA1
MIN
2.5
9.6
CKE
A10
CLK
DQ
1
3
3
8
3
-8
Power-up:
V
CLK stable
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MAX
T = 100µs
and
100
100
t
Figure 31: Initialize and Load Mode Register
CMS
t
CKS
T0
NOP
t
t
High-Z
CKH
CMH
MIN
2.5
9.6
12
1
3
3
-10
ALL BANKS
t
AS
PRE
T1
MAX
t AH
100
100
t
CK
t
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Load Extended
Mode Register
UNITS
T3
AR
ns
ns
ns
ns
ns
ns
t
MRD
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Load Mode
Register
35
T5
AR
t
MRD
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SYMBOL
t AS t AH
t
t
t
t
t
AS
t
CMH
MRD
t
BA0 = L,
BA1 = H
CKH
CMS
Micron Technology, Inc., reserves the right to change products or specifications without notice.
CODE
CKS
RFC
t
CODE
LMR
RP
T7
t
AH
t
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BA0 = L,
BA1 = H
MIN
BA0 = L,
BA1 = L
CODE
CODE
2.5
2.5
LMR
80
19
T9
1
1
2
t
-8
RFC
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MAX
ALL BANKS
t
AS
PRE 2
T19
t
MOBILE SDRAM
AH
1
©2003 Micron Technology, Inc. All rights reserved.
t
RFC
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MIN
100
2.5
2.5
20
1
1
2
DON’T CARE
T29
ACT
RA
RA
RA
64Mb: x16
-10
MAX
UNITS
t
ns
ns
ns
ns
CK
ns
ns

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