MT47H64M8CB-37E IT:B Micron Technology Inc, MT47H64M8CB-37E IT:B Datasheet - Page 6

IC DDR2 SDRAM 512MBIT 60FBGA

MT47H64M8CB-37E IT:B

Manufacturer Part Number
MT47H64M8CB-37E IT:B
Description
IC DDR2 SDRAM 512MBIT 60FBGA
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr
Datasheet

Specifications of MT47H64M8CB-37E IT:B

Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
512M (64M x 8)
Speed
3.75ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
-40°C ~ 85°C
Package / Case
60-FBGA
Organization
64Mx8
Density
512Mb
Address Bus
16b
Access Time (max)
500ps
Maximum Clock Rate
533MHz
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
145mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
512Mb: x4, x8, x16 DDR2 SDRAM
List of Tables
Table 1: Key Timing Parameters ...................................................................................................................... 2
Table 2: Addressing ......................................................................................................................................... 2
Table 3: FBGA 84-Ball – x16 and 60-Ball – x4, x8 Descriptions .......................................................................... 17
Table 4: Input Capacitance ............................................................................................................................ 26
Table 5: Absolute Maximum DC Ratings ........................................................................................................ 27
Table 6: Temperature Limits .......................................................................................................................... 28
Table 7: Thermal Impedance ......................................................................................................................... 29
Table 8: General Idd Parameters .................................................................................................................... 30
Table 9: Idd7 Timing Patterns (4-Bank Interleave READ Operation) ................................................................ 31
Table 10: DDR2 Idd Specifications and Conditions ........................................................................................ 32
Table 11: AC Operating Specifications and Conditions .................................................................................... 35
Table 12: Recommended DC Operating Conditions (SSTL_18) ........................................................................ 46
Table 13: ODT DC Electrical Characteristics ................................................................................................... 47
Table 14: Input DC Logic Levels ..................................................................................................................... 48
Table 15: Input AC Logic Levels ..................................................................................................................... 48
Table 16: Differential Input Logic Levels ........................................................................................................ 49
Table 17: Differential AC Output Parameters .................................................................................................. 51
Table 18: Output DC Current Drive ................................................................................................................ 51
Table 19: Output Characteristics .................................................................................................................... 52
Table 20: Full Strength Pull-Down Current (mA) ............................................................................................ 53
Table 21: Full Strength Pull-Up Current (mA) ................................................................................................. 54
Table 22: Reduced Strength Pull-Down Current (mA) ..................................................................................... 55
Table 23: Reduced Strength Pull-Up Current (mA) .......................................................................................... 56
Table 24: Input Clamp Characteristics ........................................................................................................... 57
Table 25: Address and Control Balls ............................................................................................................... 58
Table 26: Clock, Data, Strobe, and Mask Balls ................................................................................................. 58
Table 27: AC Input Test Conditions ................................................................................................................ 59
t
t
Table 28: DDR2-400/533 Setup and Hold Time Derating Values (
IS and
IH) ................................................... 61
t
t
Table 29: DDR2-667/800/1066 Setup and Hold Time Derating Values (
IS and
IH) .......................................... 62
t
t
Table 30: DDR2-400/533
DS,
DH Derating Values with Differential Strobe ..................................................... 65
t
t
Table 31: DDR2-667/800/1066
DS,
DH Derating Values with Differential Strobe ............................................ 67
t
t
Table 32: Single-Ended DQS Slew Rate Derating Values Using
DS
and
DH
.................................................. 68
b
b
Table 33: Single-Ended DQS Slew Rate Fully Derated (DQS, DQ at Vref) at DDR2-667 ...................................... 68
Table 34: Single-Ended DQS Slew Rate Fully Derated (DQS, DQ at Vref) at DDR2-533 ...................................... 69
Table 35: Single-Ended DQS Slew Rate Fully Derated (DQS, DQ at Vref) at DDR2-400 ...................................... 69
Table 36: Truth Table – DDR2 Commands ..................................................................................................... 74
Table 37: Truth Table – Current State Bank n – Command to Bank n ............................................................... 75
Table 38: Truth Table – Current State Bank n – Command to Bank m .............................................................. 77
Table 39: Minimum Delay with Auto Precharge Enabled ................................................................................. 78
Table 40: Burst Definition .............................................................................................................................. 83
Table 41: READ Using Concurrent Auto Precharge ........................................................................................ 104
Table 42: WRITE Using Concurrent Auto Precharge ....................................................................................... 110
Table 43: Truth Table – CKE ......................................................................................................................... 125
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
Rev. M 9/08 EN
© 2004 Micron Technology, Inc. All rights reserved.

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