MT47H64M8CB-37E IT:B Micron Technology Inc, MT47H64M8CB-37E IT:B Datasheet - Page 49

IC DDR2 SDRAM 512MBIT 60FBGA

MT47H64M8CB-37E IT:B

Manufacturer Part Number
MT47H64M8CB-37E IT:B
Description
IC DDR2 SDRAM 512MBIT 60FBGA
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr
Datasheet

Specifications of MT47H64M8CB-37E IT:B

Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
512M (64M x 8)
Speed
3.75ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
-40°C ~ 85°C
Package / Case
60-FBGA
Organization
64Mx8
Density
512Mb
Address Bus
16b
Access Time (max)
500ps
Maximum Clock Rate
533MHz
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
145mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 16: Differential Input Logic Levels
All voltages referenced to Vss
Figure 16: Differential Input Signal Levels
PDF: 09005aef82f1e6e2
Rev. M 9/08 EN
Parameter
DC input signal voltage
DC differential input voltage
AC differential input voltage
AC differential cross-point voltage
Input midpoint voltage
Notes:
Notes:
VddQ = 1.8V
1. Vin(DC) specifies the allowable DC execution of each input of differential pair such as
2. Vid(DC) specifies the input differential voltage |Vtr - Vcp| required for switching, where
3. Vid(AC) specifies the input differential voltage |Vtr - Vcp| required for switching, where
4. The typical value of Vix(AC) is expected to be about 0.5 × VddQ of the transmitting de-
5. Vmp(DC) specifies the input differential common mode voltage (Vtr + Vcp)/2 where Vtr
6. VddQ + 300mV allowed provided 1.9V is not exceeded.
1. TR and CP may not be more positive than VddQ + 0.3V or more negative than Vss - 0.3V.
2. TR represents the CK, DQS, RDQS, LDQS, and UDQS signals; CP represents CK#, DQS#,
3. This provides a minimum of 850mV to a maximum of 950mV and is expected to be
4. TR and CP must cross in this region.
5. TR and CP must meet at least Vid(DC) MIN when static and is centered around Vmp(DC).
1.075V
0.725V
–0.30V
2.1V
0.9V
CP 2
TR 2
CK, CK#, DQS, DQS#, LDQS, LDQS#, UDQS, UDQS#, and RDQS, RDQS#.
Vtr is the true input (such as CK, DQS, LDQS, UDQS) level and Vcp is the complementary
input (such as CK#, DQS#, LDQS#, UDQS#) level. The minimum value is equal to Vih(DC) -
Vil(DC). Differential input signal levels are shown in Figure 16 (page 49).
Vtr is the true input (such as CK, DQS, LDQS, UDQS, RDQS) level and Vcp is the comple-
mentary input (such as CK#, DQS#, LDQS#, UDQS#, RDQS#) level. The minimum value is
equal to Vih(AC) - Vil(AC), as shown in Table 15 (page 48).
vice and Vix(AC) is expected to track variations in VddQ. Vix(AC) indicates the voltage at
which differential input signals must cross, as shown in Figure 16 (page 49).
is the true input (CK, DQS) level and Vcp is the complementary input (CK#, DQS#).
Vmp(DC) is expected to be approximately 0.5 × VddQ.
RDQS#, LDQS#, and UDQS# signals.
VddQ/2.
Input Electrical Characteristics and Operating Conditions
X
Vmp(DC)
Symbol
Vin(DC)
Vid(DC)
Vid(AC)
Vix(AC)
0.50 × VddQ - 175
49
X
–300
Min
250
500
850
Micron Technology, Inc. reserves the right to change products or specifications without notice.
512Mb: x4, x8, x16 DDR2 SDRAM
0.50 × VddQ + 175
Vin(dc) MAX 1
Vmp(dc) 3
Vin(dc) MIN 1
Vix(ac) 4
VddQ
VddQ
VddQ
Max
950
Vid(dc) 5
© 2004 Micron Technology, Inc. All rights reserved.
Vid(ac) 6
Units
mV
mV
mV
mV
mV
Notes
1, 6
2, 6
3, 6
4
5

Related parts for MT47H64M8CB-37E IT:B