MT47H64M8CB-37E IT:B Micron Technology Inc, MT47H64M8CB-37E IT:B Datasheet - Page 19

• Manufacturer Part Number: MT47H64M8CB-37E IT:B
• Description: IC DDR2 SDRAM 512MBIT 60FBGA
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr

Specifications of MT47H64M8CB-37E IT:B

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 3.75ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 60-FBGA
• Organization: 64Mx8
• Density: 512Mb
• Address Bus: 16b
• Access Time (max): 500ps
• Maximum Clock Rate: 533MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 145mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 3: FBGA 84-Ball – x16 and 60-Ball – x4, x8 Descriptions (Continued)
PDF: 09005aef82f1e6e2
Rev. M 9/08 EN
L1, R8, R3, R7
A1, E1, M9,
E9, G1, G7,
D2, D8, E7,
A9, C1, C3,
C7, C9, G3,
A7, B2, B8,
F2, F8, H2,
A3, E3, J3,
Number
x16 Ball
B7, A8
N1, P9
A2, E2
A8, E8
R1, J9
G9
H8
J1
J2
J7
–
–
A3, E3, J1, K9
x4, x8 Ball
A9, C1, C3,
A7, B2, B8,
B1, B9, D1,
A1, E9, L1,
G1, L3, L7
Number
D2, D8
A2, A8
B3, A2
C7, C9
H9
D9
E1
E2
E7
–
–
RDQS, RDQS# Output Redundant data strobe: For 64 Meg x 8 only. RDQS is enabled/dis-
Symbol
UDQS#
UDQS,
VddQ
VssDL
VddL
VssQ
Vref
Vdd
RFU
Vss
NU
NC
NF
Supply
Supply
Supply
Supply
Supply
Supply
Supply
Type
I/O
–
–
–
–
Description
Data strobe for upper byte: Output with read data, input with
write data for source synchronous operation. Edge-aligned with
read data, center-aligned with write data. UDQS# is only used
when differential data strobe mode is enabled via the LOAD MODE
command.
abled via the load mode command to the extended mode register
(EMR). When RDQS is enabled, RDQS is output with read data only
and is ignored during write data. When RDQS is disabled, ball B3
becomes data mask (see DM ball). RDQS# is only used when RDQS
is enabled and differential data strobe mode is enabled.
Power supply: 1.8V ±0.1V.
DQ power supply: 1.8V ±0.1V. Isolated on the device for im-
proved noise immunity.
DLL power supply: 1.8V ±0.1V.
SSTL_18 reference voltage (VddQ/2).
Ground.
DLL ground: Isolated on the device from Vss and VssQ.
DQ ground: Isolated on the device for improved noise immunity.
No connect: These balls should be left unconnected.
No function: x8: these balls are used as DQ4–DQ7; x4: they are no
function.
Not used: If EMR(E10) = 0: x16, A8 = UDQS# and E8 = LDQS#; x8,
A2 = RDQS# and A8 = DQS#; x4, A2 = NU and A8 = NU. If EMR(E10)
= 1: x16, A8 = NU and E8 = NU; x8, A2 = NU and A8 = NU; x4, A2 =
NU and A8 = NU.
Reserved for future use: Bank address BA2, row address bits A13
(x16 only), A14, and A15.
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
Ball Assignments and Descriptions
512Mb: x4, x8, x16 DDR2 SDRAM
© 2004 Micron Technology, Inc. All rights reserved.