MT47H64M8CB-37E IT:B Micron Technology Inc, MT47H64M8CB-37E IT:B Datasheet - Page 47

IC DDR2 SDRAM 512MBIT 60FBGA

MT47H64M8CB-37E IT:B

Manufacturer Part Number
MT47H64M8CB-37E IT:B
Description
IC DDR2 SDRAM 512MBIT 60FBGA
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr
Datasheet

Specifications of MT47H64M8CB-37E IT:B

Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
512M (64M x 8)
Speed
3.75ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
-40°C ~ 85°C
Package / Case
60-FBGA
Organization
64Mx8
Density
512Mb
Address Bus
16b
Access Time (max)
500ps
Maximum Clock Rate
533MHz
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
145mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
ODT DC Electrical Characteristics
Table 13: ODT DC Electrical Characteristics
All voltages are referenced to Vss
PDF: 09005aef82f1e6e2
Rev. M 9/08 EN
Parameter
Rtt effective impedance value for 75Ω setting
EMR (A6, A2) = 0, 1
Rtt effective impedance value for 150Ω setting
EMR (A6, A2) = 1, 0
Rtt effective impedance value for 50Ω setting
EMR (A6, A2) = 1, 1
Deviation of VM with respect to VddQ/2
Notes:
1. Rtt1(eff) and Rtt2(eff) are determined by separately applying Vih(AC) and Vil(DC) to the
2. Minimum IT and AT device values are derated by six percent when the devices operate
3. Measure voltage (VM) at tested ball with no load.
ball being tested, and then measuring current, I(Vih[AC]), and I(Vil[AC]), respectively.
between –40°C and 0°C (T
47
C
).
Symbol
Rtt1(eff)
Rtt2(eff)
Rtt3(eff)
ΔVM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
512Mb: x4, x8, x16 DDR2 SDRAM
ODT DC Electrical Characteristics
Min
120
60
40
–6
Nom
150
75
50
© 2004 Micron Technology, Inc. All rights reserved.
Max
180
90
60
6
Units
%
Ω
Ω
Ω
Notes
1, 2
1, 2
1, 2
3

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