MT45W4MW16BCGB-701 WT TR Micron Technology Inc, MT45W4MW16BCGB-701 WT TR Datasheet - Page 42
![IC PSRAM 64MBIT 70NS 54VFBGA](/photos/7/22/72262/557-54-vfbga_sml.jpg)
MT45W4MW16BCGB-701 WT TR
Manufacturer Part Number
MT45W4MW16BCGB-701 WT TR
Description
IC PSRAM 64MBIT 70NS 54VFBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT45W4MW16BCGB-701_IT.pdf
(69 pages)
Specifications of MT45W4MW16BCGB-701 WT TR
Format - Memory
RAM
Memory Type
PSRAM (Page)
Memory Size
64M (4M x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-30°C ~ 85°C
Package / Case
54-VFBGA
Operating Temperature (max)
85C
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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Timing Diagrams
Figure 28:
Figure 29:
Table 20:
PDF: 09005aef8247bd51/Source: 09005aef8247bd83
64mb_burst_cr1_5_p25z_133mhz__2.fm - Rev. F 9/07 EN
Parameter
Time from DPD entry to DPD exit
CE# LOW time to exit DPD
Initialization period
CE#
Initialization Timing Parameters
Initialization Period
DPD Entry and Exit Timing
RCR[4] = 0
Notes:
Write
Vcc, VccQ = 1.7V
1. The CellularRAM Workgroup 1.5 specification for
DPD enabled
t DPD
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.5 Memory
DPD exit
t DPDX
42
Symbol
t
t
t
DPD
DPDX
PU
t PU
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Device initialization
Min
10
10
–
t PU
t
DPD is a minimum of 150µs.
70ns
normal operation
Device ready for
Max
Vcc (MIN)
150
–
–
normal operation
©2005 Micron Technology, Inc. All rights reserved.
Device ready for
Timing Diagrams
Unit
µs
µs
µs
Notes
1
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