MT45W4MW16BCGB-701 WT TR Micron Technology Inc, MT45W4MW16BCGB-701 WT TR Datasheet - Page 29

IC PSRAM 64MBIT 70NS 54VFBGA

MT45W4MW16BCGB-701 WT TR

Manufacturer Part Number
MT45W4MW16BCGB-701 WT TR
Description
IC PSRAM 64MBIT 70NS 54VFBGA
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT45W4MW16BCGB-701 WT TR

Format - Memory
RAM
Memory Type
PSRAM (Page)
Memory Size
64M (4M x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-30°C ~ 85°C
Package / Case
54-VFBGA
Operating Temperature (max)
85C
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 6:
Figure 22:
PDF: 09005aef8247bd51/Source: 09005aef8247bd83
64mb_burst_cr1_5_p25z_133mhz__2.fm - Rev. F 9/07 EN
BCR[13:11]
010
011
100
Others
DQ[15:0]
DQ[15:0]
A[21:0]
ADV#
CLK
2 (3 clocks)
3 (4 clocks)—default
4 (5 clocks)
Reserved
Variable Latency Configuration Codes (BCR [14] = 0)
V
V
V
V
V
V
V
V
V
V
Configuration Code
Latency Counter (Variable Initial Latency, No Refresh Collision)
IH
IL
IH
IL
IH
IL
OH
OL
OH
OL
Notes:
Latency
address
Valid
1. Latency is the number of clock cycles from the initialization of a burst operation until data
appears. Data is transferred on the next clock cycle. READ latency can range from the nor-
mal latency to the value shown for refresh collision. WRITE latency is fixed at the value
shown for normal latency.
Code 3
Code 2
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.5 Memory
Normal
(Default)
2
3
4
Latency
Refresh Collision
29
output
1
Valid
4
6
8
Micron Technology, Inc., reserves the right to change products or specifications without notice.
output
output
Valid
Valid
104 (9.62ns)
Maximum Input CLK Frequency (MHz)
66 (15.0ns)
133 (7.5ns)
-7013
output
output
Valid
Valid
Don’t Care
©2005 Micron Technology, Inc. All rights reserved.
104 (9.62ns)
output
output
66 (15.0ns)
Valid
Valid
-701
Undefined
output
output
Valid
Valid
Registers
52 (19.2ns)
80 (12.5ns)
-708

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