MT29F4G08BABWP-ET Micron Technology Inc, MT29F4G08BABWP-ET Datasheet - Page 53
![IC FLASH 4GBIT 48TSOP](/photos/7/23/72302/micron_photo_-_mt29f2g__sml.jpg)
MT29F4G08BABWP-ET
Manufacturer Part Number
MT29F4G08BABWP-ET
Description
IC FLASH 4GBIT 48TSOP
Manufacturer
Micron Technology Inc
Datasheet
1.MT29F4G08BABWP-ET.pdf
(57 pages)
Specifications of MT29F4G08BABWP-ET
Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
4G (512M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
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Figure 51:
PDF: 09005aef818a56a7 / Source: 09005aef81590bdd
2gb_nand_m29b__2.fm - Rev. I 1/06 EN
WE#
R/B#
CE#
ALE
RE#
I/Ox
CLE
SERIAL DATA
INPUT
80h
t WC
Add 1
Col
PROGRAM PAGE CACHE MODE
Add 2
Col
Add 1
Row
Note:
Add 2
Row
Last Page - 1
Add 3
Row
PROGRAM PAGE CACHE MODE operations must not cross die address boundaries.
D
N
IN
Serial Input
D
M
IN
PROGRAM
15h
t WB
t CBSY
2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
80h
53
Add 1
Col
Add 2
Col
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Add 1
Row
Add 2
Row
Last Page
Add 3
Row
t ADL
D
N
IN
D
M
IN
©2004 Micron Technology, Inc. All rights reserved.
PROGRAM
10h
Timing Diagrams
t WB t PROG
Don‘t Care
70h
Status
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