MT29F4G08BABWP-ET Micron Technology Inc, MT29F4G08BABWP-ET Datasheet - Page 14
![IC FLASH 4GBIT 48TSOP](/photos/7/23/72302/micron_photo_-_mt29f2g__sml.jpg)
MT29F4G08BABWP-ET
Manufacturer Part Number
MT29F4G08BABWP-ET
Description
IC FLASH 4GBIT 48TSOP
Manufacturer
Micron Technology Inc
Datasheet
1.MT29F4G08BABWP-ET.pdf
(57 pages)
Specifications of MT29F4G08BABWP-ET
Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
4G (512M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Figure 9:
Table 4:
PDF: 09005aef818a56a7 / Source: 09005aef81590bdd
2gb_nand_m29b__2.fm - Rev. I 1/06 EN
Cycle
First
Second
Third
Fourth
Fifth
Cache Register
Data Register
4,096 blocks
Array Addressing: MT29F4G08BxB and MT29F8G08FxB
CAx = column address; RAx = row address.
Array Organization for MT29F4G08BxB and MT29F8G08FxB (x8)
RA19
RA27
LOW
LOW
I/O7
CA7
Notes: 1. Die address boundary: 0 = 0 – 2Gb, 1 = 2Gb – 4Gb.
Note:
RA18
RA26
LOW
LOW
I/O6
CA6
For the 8Gb MT29F8G08F, the 4Gb array organization shown here applies to each chip
enable (CE# and CE2#).
2,048
2,048
1 Block
RA17
RA25
LOW
LOW
I/O5
CA5
2,112 bytes
2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
RA16
RA24
LOW
LOW
I/O4
CA4
14
64
64
Micron Technology, Inc., reserves the right to change products or specifications without notice.
CA11
RA15
RA23
LOW
I/O3
CA3
64 pages = 1 block
1 page
1 block
1 device = (2K + 64) bytes x 64 pages
I/O 7
I/O 0
CA10
RA14
RA22
LOW
= (2K + 64 bytes)
= (2K + 64) bytes x 64 pages
= (128K + 4K) bytes
= 4,224 Mb
I/O2
CA2
x 4,096 blocks
(128K + 4K) bytes
©2004 Micron Technology, Inc. All rights reserved.
RA29
RA13
RA21
I/O1
CA1
CA9
1
Addressing
RA12
RA20
RA28
I/O0
CA0
CA8