MT29F4G08BABWP-ET Micron Technology Inc, MT29F4G08BABWP-ET Datasheet - Page 32
![IC FLASH 4GBIT 48TSOP](/photos/7/23/72302/micron_photo_-_mt29f2g__sml.jpg)
MT29F4G08BABWP-ET
Manufacturer Part Number
MT29F4G08BABWP-ET
Description
IC FLASH 4GBIT 48TSOP
Manufacturer
Micron Technology Inc
Datasheet
1.MT29F4G08BABWP-ET.pdf
(57 pages)
Specifications of MT29F4G08BABWP-ET
Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
4G (512M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
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Figure 26:
Figure 27:
PDF: 09005aef818a56a7 / Source: 09005aef81590bdd
2gb_nand_m29b__2.fm - Rev. I 1/06 EN
R/B#
I/Ox
R/B#
I/Ox
00h
00h
INTERNAL DATA MOVE
INTERNAL DATA MOVE with RANDOM DATA INPUT
(5 cycles)
Address
(5 cycles)
Address
35h
35h
t
R
85h
t R
(5 cycles)
Address
85h
2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
(5 cycles)
Address
Data
32
85h
Unlimited number
of repetitions.
Micron Technology, Inc., reserves the right to change products or specifications without notice.
10h
(2 cycles)
Address
t PROG
Data
10h
70h
Command Definitions
t
PROG
©2004 Micron Technology, Inc. All rights reserved.
70h
Status
Status
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