MT29F4G08BABWP-ET Micron Technology Inc, MT29F4G08BABWP-ET Datasheet - Page 19
![IC FLASH 4GBIT 48TSOP](/photos/7/23/72302/micron_photo_-_mt29f2g__sml.jpg)
MT29F4G08BABWP-ET
Manufacturer Part Number
MT29F4G08BABWP-ET
Description
IC FLASH 4GBIT 48TSOP
Manufacturer
Micron Technology Inc
Datasheet
1.MT29F4G08BABWP-ET.pdf
(57 pages)
Specifications of MT29F4G08BABWP-ET
Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
4G (512M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
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Figure 14:
Figure 15:
PDF: 09005aef818a56a7 / Source: 09005aef81590bdd
2gb_nand_m29b__2.fm - Rev. I 1/06 EN
I
TC vs. Rp
OL
vs. Rp
I
T
1.20µs
1.00µs
800ns
600ns
400ns
200ns
3.50mA
3.00mA
2.50mA
2.00mA
1.50mA
1.00mA
0.50mA
0.00mA
0ns
0
0
2kΩ
2000
4kΩ
4000
2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
6000
6kΩ
Rp
Rp
19
8000
8kΩ
10000
10kΩ
I
OL
I
RC = TC
C = 100pF
Micron Technology, Inc., reserves the right to change products or specifications without notice.
OL
@3.60V (max)
@3.60V (max)
12000
12kΩ
©2004 Micron Technology, Inc. All rights reserved.
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