MT29F4G08BABWP-ET Micron Technology Inc, MT29F4G08BABWP-ET Datasheet - Page 27
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MT29F4G08BABWP-ET
Manufacturer Part Number
MT29F4G08BABWP-ET
Description
IC FLASH 4GBIT 48TSOP
Manufacturer
Micron Technology Inc
Datasheet
1.MT29F4G08BABWP-ET.pdf
(57 pages)
Specifications of MT29F4G08BABWP-ET
Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
4G (512M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Table 8:
READ STATUS 70h
PDF: 09005aef818a56a7 / Source: 09005aef81590bdd
2gb_nand_m29b__2.fm - Rev. I 1/06 EN
Spare area size (bytes)
Block size (w/o spare)
MT29F2G08AAB
MT29F2G16AAB
MT29F4G08BAB
MT29F4G16BAB
MT29F8G08FAB
Organization
Byte value
Byte value
Byte value
Page size
Reserved
Byte 0
Byte 1
Byte 2
Byte 3
Device ID and Configuration Codes
Notes: 1. b = binary, h = hex
Manufacturer ID
2Gb, x8, 3V
2Gb, x16, 3V
4Gb, x8, 3V
4Gb, x16, 3V
8Gb, x8, 3V
Don’t Care
These NAND Flash devices have an 8-bit status register that the software can read dur-
ing device operation. On the x16 device, I/O[15:8] are “0” when reading the status regis-
ter. Table 9 on page 28 describes the status register.
After the READ STATUS command has been issued to the NAND Flash device, all subse-
quent READ cycles will output data from the status register until another command is
issued. Note that the RE# pin can be toggled multiple times without issuing a new READ
STATUS command, as shown in Figure 21. Each time the RE# pin is toggled, the updated
status will be output on I/O[7:0].
In addition, after a READ STATUS command has been issued to the NAND Flash device,
the status register provides continually updated output on I/O[7:0] as long as CE# and
RE# are held LOW, i.e., RE# does not have to be toggled.
Note that MT29FxGxxxAB devices do not support a READ STATUS operation in which
the READ STATUS (70h) command is repeatedly issued after each RE# toggle.
Additional details regarding READ STATUS implementation are available in Micron
technical note TN-29-13 at: www.micron.com/products/nand/massstorage/technote.
Device ID
Options
2. The MT29F8G08FAB device ID code reflects the configuration of each 4Gb section.
Micron
128KB
2KB
x16
x16
64
x8
x8
I/O7
0
1
1
1
1
1
0
0
0
x
I/O6
2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
0
1
1
1
1
1
x
0
1
0
1
I/O5
27
1
0
0
0
0
0
0
0
0
x
I/O4
0
1
0
1
0
1
x
1
1
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
I/O3
1
1
1
1
1
1
x
0
0
0
I/O2
1
0
0
1
1
1
1
1
1
x
I/O1
0
1
1
0
0
0
x
0
0
0
Command Definitions
©2004 Micron Technology, Inc. All rights reserved.
I/O0
0
0
0
0
0
0
1
1
1
x
Value
DAh
CAh
DCh
CCh
DCh
XXh
2Ch
01b
01b
01b
15h
55h
0b
1b
0b
1
Notes
2